Edge structures and properties of triangular antidots in single-layer MoS2

Li Yong Gan; Yingchun Cheng; Udo Schwingenschlögl; Yingbang Yao; Yong Zhao; Xixiang Zhang; Wei Huang

doi:10.1063/1.4962132

Edge structures and properties of triangular antidots in single-layer MoS2

Li Yong Gan, Yingchun Cheng, Udo Schwingenschlögl, Yingbang Yao, Yong Zhao, Xixiang Zhang, Wei Huang

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Abstract

Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

Original language	English (US)
Pages (from-to)	091603
Journal	Applied Physics Letters
Volume	109
Issue number	9
DOIs	https://doi.org/10.1063/1.4962132
State	Published - Aug 30 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Science Foundation of China (Nos. 11504303, 11504169, 61575094, and 61136003), the National Basic Research Program of China (2015CB932200), the Fundamental Research Funds for the Central Universities (SWJTU2682016ZDPY10), and the Synergetic Innovation Center for Organic Electronics and Information Displays. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).

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https://repository.kaust.edu.sa/bitstream/10754/622023/1/12E4962132.pdf

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@article{b54a25020aba4133be269b3197e96550,

title = "Edge structures and properties of triangular antidots in single-layer MoS2",

abstract = "Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.",

author = "Gan, {Li Yong} and Yingchun Cheng and Udo Schwingenschl{\"o}gl and Yingbang Yao and Yong Zhao and Xixiang Zhang and Wei Huang",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China (Nos. 11504303, 11504169, 61575094, and 61136003), the National Basic Research Program of China (2015CB932200), the Fundamental Research Funds for the Central Universities (SWJTU2682016ZDPY10), and the Synergetic Innovation Center for Organic Electronics and Information Displays. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).",

year = "2016",

month = aug,

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doi = "10.1063/1.4962132",

language = "English (US)",

volume = "109",

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journal = "Applied Physics Letters",

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T1 - Edge structures and properties of triangular antidots in single-layer MoS2

AU - Gan, Li Yong

AU - Cheng, Yingchun

AU - Schwingenschlögl, Udo

AU - Yao, Yingbang

AU - Zhao, Yong

AU - Zhang, Xixiang

AU - Huang, Wei

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China (Nos. 11504303, 11504169, 61575094, and 61136003), the National Basic Research Program of China (2015CB932200), the Fundamental Research Funds for the Central Universities (SWJTU2682016ZDPY10), and the Synergetic Innovation Center for Organic Electronics and Information Displays. The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).

PY - 2016/8/30

Y1 - 2016/8/30

N2 - Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

AB - Density functional theory and experiments are employed to shed light on the edge structures of antidots in O etched single-layer MoS2. The equilibrium morphology is found to be the zigzag Mo edge with each Mo atom bonded to two O atoms, in a wide range of O chemical potentials. Scanning electron microscopy shows that the orientation of the created triangular antidots is opposite to the triangular shape of the single-layer MoS2 samples, in agreement with the theoretical predictions. Furthermore, edges induced by O etching turn out to be p-doped, suggesting an effective strategy to realize p-type MoS2 devices. Published by AIP Publishing.

UR - http://hdl.handle.net/10754/622023

UR - http://aip.scitation.org/doi/full/10.1063/1.4962132

UR - http://www.scopus.com/inward/record.url?scp=84984977853&partnerID=8YFLogxK

U2 - 10.1063/1.4962132

DO - 10.1063/1.4962132

M3 - Article

SN - 0003-6951

VL - 109

SP - 091603

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Edge structures and properties of triangular antidots in single-layer MoS2

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