Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by MOE under AcRF Tier 2 (ARC 19/15, No. MOE2014-T2-2-093; MOE2015-T2-2-057; MOE2016-T2-2-103) and AcRF Tier 1 (2016-T1-001-147; 2016-T1-002-051), and NTU under Start-Up Grant (M4081296.070.500000) in Singapore. L. G. thanks the financial support from the National Program on Key Basic Research Project (2014CB921002) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB07030200), the Key Research Program of Frontier Sciences, CAS (Grant No. QYZDBSSW-JSC035) and National Natural Science Foundation of China (51522212, 51421002, 51672307). We would like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation, Nanyang Technological University, Singapore, for use of their electron microscopy facilities.