Dynamics of threshold voltage shifts in organic and amorphous silicon field-effect transistors

Engineering

• Transistor 66%
• Field-Effect Transistor 66%
• Measurement 33%
• Reliability 33%
• Layer Thickness 33%
• Model Compound 33%
• Surface Density 33%
• Temperature 33%
• Demonstrates 33%
• Drain Bias 33%

Physics

• Threshold Voltage 100%
• Amorphous Silicon 66%
• Spin 33%
• Temperature 33%
• Reliability 33%
• Vacuum 33%

Material Science

• Field Effect Transistors 66%
• Amorphous Silicon 66%
• Polymer Films 33%
• Liquid Films 33%
• Stress Measurement 33%