Abstract
Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
Original language | English (US) |
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Title of host publication | 2007 Quantum Electronics and Laser Science Conference, QELS |
DOIs | |
State | Published - 2007 |
Externally published | Yes |
Event | 2007 Quantum Electronics and Laser Science Conference, QELS - Baltimore, MD, United States Duration: May 6 2007 → May 11 2007 |
Other
Other | 2007 Quantum Electronics and Laser Science Conference, QELS |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 05/6/07 → 05/11/07 |
ASJC Scopus subject areas
- Physics and Astronomy(all)