Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well

Xiaodong Mu*, Yujie J. Ding, Boon S. Ooi, Mark Hopkinson

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
StatePublished - 2007
Externally publishedYes
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: May 6 2007May 11 2007

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
Country/TerritoryUnited States
CityBaltimore, MD
Period05/6/0705/11/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Dynamics of exciton recombination in InAs quantum dots embedded in InGaAs/GaAs quantum well'. Together they form a unique fingerprint.

Cite this