Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

Changmin Lee; Chong Zhang; Daniel L. Becerra; S. Lee; Charles A. Forman; Sang Ho Oh; Robert M. Farrell; James S. Speck; Shuji Nakamura; John E. Bowers; S. P. DenBaars

doi:10.1063/1.4962430

Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

Changmin Lee, Chong Zhang, Daniel L. Becerra, S. Lee, Charles A. Forman, Sang Ho Oh, Robert M. Farrell, James S. Speck, Shuji Nakamura, John E. Bowers, S. P. DenBaars

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated. LDs were grown on semipolar (2021) bulk GaN substrates and fabricated into devices with cavity lengths ranging from 900 nm to 1800 nm. A 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying were demonstrated, which were limited by the bandwidth of the photodetector used for the measurements. The differential gain of the LDs was determined to be 2.5 ± 0.5 × 10-16 cm2 by comparing the slope efficiency for different cavity lengths. Analysis of the frequency response showed that the K-factor, the gain compression factor, and the intrinsic maximum bandwidth were 0.33 ns, 7.4 × 10-17 cm3, and 27 GHz, respectively.

Original language	English (US)
Pages (from-to)	101104
Journal	Applied Physics Letters
Volume	109
Issue number	10
DOIs	https://doi.org/10.1063/1.4962430
State	Published - Sep 8 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: This work was funded by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS-0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR05-20415).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4962430

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title = "Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz",

abstract = "The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated. LDs were grown on semipolar (2021) bulk GaN substrates and fabricated into devices with cavity lengths ranging from 900 nm to 1800 nm. A 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying were demonstrated, which were limited by the bandwidth of the photodetector used for the measurements. The differential gain of the LDs was determined to be 2.5 ± 0.5 × 10-16 cm2 by comparing the slope efficiency for different cavity lengths. Analysis of the frequency response showed that the K-factor, the gain compression factor, and the intrinsic maximum bandwidth were 0.33 ns, 7.4 × 10-17 cm3, and 27 GHz, respectively.",

author = "Changmin Lee and Chong Zhang and Becerra, {Daniel L.} and S. Lee and Forman, {Charles A.} and Oh, {Sang Ho} and Farrell, {Robert M.} and Speck, {James S.} and Shuji Nakamura and Bowers, {John E.} and DenBaars, {S. P.}",

note = "KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: This work was funded by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS-0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR05-20415). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1063/1.4962430",

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AU - Lee, Changmin

AU - Zhang, Chong

AU - Becerra, Daniel L.

AU - Lee, S.

AU - Forman, Charles A.

AU - Oh, Sang Ho

AU - Farrell, Robert M.

AU - Speck, James S.

AU - Nakamura, Shuji

AU - Bowers, John E.

AU - DenBaars, S. P.

N1 - KAUST Repository Item: Exported on 2022-06-08 Acknowledgements: This work was funded by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at University of California, Santa Barbara (UCSB). A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation (NSF) funded Nanotechnology Infrastructure Network (NNIN) (ECS-0335765). This work also made use of UCSB Materials Research Laboratory (MRL) central facilities supported by the NSF MRSEC Program (DMR05-20415). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/9/8

Y1 - 2016/9/8

N2 - The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated. LDs were grown on semipolar (2021) bulk GaN substrates and fabricated into devices with cavity lengths ranging from 900 nm to 1800 nm. A 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying were demonstrated, which were limited by the bandwidth of the photodetector used for the measurements. The differential gain of the LDs was determined to be 2.5 ± 0.5 × 10-16 cm2 by comparing the slope efficiency for different cavity lengths. Analysis of the frequency response showed that the K-factor, the gain compression factor, and the intrinsic maximum bandwidth were 0.33 ns, 7.4 × 10-17 cm3, and 27 GHz, respectively.

AB - The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated. LDs were grown on semipolar (2021) bulk GaN substrates and fabricated into devices with cavity lengths ranging from 900 nm to 1800 nm. A 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying were demonstrated, which were limited by the bandwidth of the photodetector used for the measurements. The differential gain of the LDs was determined to be 2.5 ± 0.5 × 10-16 cm2 by comparing the slope efficiency for different cavity lengths. Analysis of the frequency response showed that the K-factor, the gain compression factor, and the intrinsic maximum bandwidth were 0.33 ns, 7.4 × 10-17 cm3, and 27 GHz, respectively.

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Dynamic characteristics of 410 nm semipolar (2021) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

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