Dual work function high-k/metal gate CMOS FinFETs

Muhammad Mustafa Hussain; Casey Smith; Pankai Kalra; Ji Woon Yang; Gabe Gebara; Barry Sassman; Paul Kirsch; Prashant Majhi; Seung Chul Song; Rusty Harris; Hsing Huang Tseng; Raj Jammy

doi:10.1109/ESSDERC.2007.4430915

Dual work function high-k/metal gate CMOS FinFETs

Muhammad Mustafa Hussain^*, Casey Smith, Pankai Kalra, Ji Woon Yang, Gabe Gebara, Barry Sassman, Paul Kirsch, Prashant Majhi, Seung Chul Song, Rusty Harris, Hsing Huang Tseng, Raj Jammy

^*Corresponding author for this work

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

For the first time, a set of complementary metal oxide semiconductor (CMOS) FinFET devices with two different high-k/metal gate stacks of dual work function has been integrated on the same wafer to overcome the integration complexity. Two completely different metals deposited by atomic layer deposition have been Integrated In a process that includes gate stack integration and dual metal gate etch. Excellent short channel characteristics with low drain induced barrier lowering (DIBL) and subthreshold swing ASS have been observed with fairly symmetric V_Th.

Original language	English (US)
Title of host publication	ESSDERC07 - 2007 37th European Solid State Device Research Conference
Publisher	IEEE Computer Society
Pages	207-209
Number of pages	3
ISBN (Print)	1424411238, 9781424411238
DOIs	https://doi.org/10.1109/ESSDERC.2007.4430915
State	Published - Jan 1 2008
Event	ESSDERC 2007 - 37th European Solid-State Device Research Conference - Munich, Germany Duration: Sep 11 2007 → Sep 13 2007

Publication series

Name	ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Volume	2007

Other

Other	ESSDERC 2007 - 37th European Solid-State Device Research Conference
Country/Territory	Germany
City	Munich
Period	09/11/07 → 09/13/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ESSDERC.2007.4430915

Cite this

Hussain, M. M., Smith, C., Kalra, P., Yang, J. W., Gebara, G., Sassman, B., Kirsch, P., Majhi, P., Song, S. C., Harris, R., Tseng, H. H., & Jammy, R. (2008). Dual work function high-k/metal gate CMOS FinFETs. In ESSDERC07 - 2007 37th European Solid State Device Research Conference (pp. 207-209). Article 4430915 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2007.4430915

@inproceedings{a7dd348888314646a9ff308e30adab9e,

title = "Dual work function high-k/metal gate CMOS FinFETs",

abstract = "For the first time, a set of complementary metal oxide semiconductor (CMOS) FinFET devices with two different high-k/metal gate stacks of dual work function has been integrated on the same wafer to overcome the integration complexity. Two completely different metals deposited by atomic layer deposition have been Integrated In a process that includes gate stack integration and dual metal gate etch. Excellent short channel characteristics with low drain induced barrier lowering (DIBL) and subthreshold swing ASS have been observed with fairly symmetric VTh.",

author = "Hussain, {Muhammad Mustafa} and Casey Smith and Pankai Kalra and Yang, {Ji Woon} and Gabe Gebara and Barry Sassman and Paul Kirsch and Prashant Majhi and Song, {Seung Chul} and Rusty Harris and Tseng, {Hsing Huang} and Raj Jammy",

year = "2008",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2007.4430915",

language = "English (US)",

isbn = "1424411238",

series = "ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "207--209",

booktitle = "ESSDERC07 - 2007 37th European Solid State Device Research Conference",

address = "United States",

note = "ESSDERC 2007 - 37th European Solid-State Device Research Conference ; Conference date: 11-09-2007 Through 13-09-2007",

}

Hussain, MM, Smith, C, Kalra, P, Yang, JW, Gebara, G, Sassman, B, Kirsch, P, Majhi, P, Song, SC, Harris, R, Tseng, HH & Jammy, R 2008, Dual work function high-k/metal gate CMOS FinFETs. in ESSDERC07 - 2007 37th European Solid State Device Research Conference., 4430915, ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference, vol. 2007, IEEE Computer Society, pp. 207-209, ESSDERC 2007 - 37th European Solid-State Device Research Conference, Munich, Germany, 09/11/07. https://doi.org/10.1109/ESSDERC.2007.4430915

Dual work function high-k/metal gate CMOS FinFETs. / Hussain, Muhammad Mustafa; Smith, Casey; Kalra, Pankai et al.
ESSDERC07 - 2007 37th European Solid State Device Research Conference. IEEE Computer Society, 2008. p. 207-209 4430915 (ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference; Vol. 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dual work function high-k/metal gate CMOS FinFETs

AU - Hussain, Muhammad Mustafa

AU - Smith, Casey

AU - Kalra, Pankai

AU - Yang, Ji Woon

AU - Gebara, Gabe

AU - Sassman, Barry

AU - Kirsch, Paul

AU - Majhi, Prashant

AU - Song, Seung Chul

AU - Harris, Rusty

AU - Tseng, Hsing Huang

AU - Jammy, Raj

PY - 2008/1/1

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AB - For the first time, a set of complementary metal oxide semiconductor (CMOS) FinFET devices with two different high-k/metal gate stacks of dual work function has been integrated on the same wafer to overcome the integration complexity. Two completely different metals deposited by atomic layer deposition have been Integrated In a process that includes gate stack integration and dual metal gate etch. Excellent short channel characteristics with low drain induced barrier lowering (DIBL) and subthreshold swing ASS have been observed with fairly symmetric VTh.

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SN - 9781424411238

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BT - ESSDERC07 - 2007 37th European Solid State Device Research Conference

PB - IEEE Computer Society

T2 - ESSDERC 2007 - 37th European Solid-State Device Research Conference

Y2 - 11 September 2007 through 13 September 2007

ER -

Dual work function high-k/metal gate CMOS FinFETs

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