Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

Yi-Jen Huang; Shih-Chun Chao; Der-Hsien Lien; Cheng-Yen Wen; Jr-Hau He; Si-Chen Lee

doi:10.1038/srep23945

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

Yi-Jen Huang, Shih-Chun Chao, Der-Hsien Lien, Cheng-Yen Wen, Jr-Hau He, Si-Chen Lee

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (

Original language	English (US)
Journal	Scientific Reports
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/srep23945
State	Published - Apr 7 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-002-031 and NSC 100-2112-M-002-019.

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10.1038/srep23945

https://repository.kaust.edu.sa/bitstream/10754/604979/1/srep23945.pdf

Cite this

@article{c7082b7728794b058aa73bd6fa5469f0,

title = "Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions",

abstract = "The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (",

author = "Yi-Jen Huang and Shih-Chun Chao and Der-Hsien Lien and Cheng-Yen Wen and Jr-Hau He and Si-Chen Lee",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-002-031 and NSC 100-2112-M-002-019.",

year = "2016",

month = apr,

day = "7",

doi = "10.1038/srep23945",

language = "English (US)",

volume = "6",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Research",

number = "1",

}

TY - JOUR

T1 - Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

AU - Huang, Yi-Jen

AU - Chao, Shih-Chun

AU - Lien, Der-Hsien

AU - Wen, Cheng-Yen

AU - He, Jr-Hau

AU - Lee, Si-Chen

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-002-031 and NSC 100-2112-M-002-019.

PY - 2016/4/7

Y1 - 2016/4/7

N2 - The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (

AB - The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (

UR - http://hdl.handle.net/10754/604979

UR - http://www.nature.com/articles/srep23945

UR - http://www.scopus.com/inward/record.url?scp=84964043507&partnerID=8YFLogxK

U2 - 10.1038/srep23945

DO - 10.1038/srep23945

M3 - Article

C2 - 27052322

SN - 2045-2322

VL - 6

JO - Scientific Reports

JF - Scientific Reports

IS - 1

ER -

Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

Abstract

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