The combination of nonvolatile memory switching and volatile threshold switching functions of transition metal oxides in crossbar memory arrays is of great potential for replacing charge-based flash memory in very-large-scale integration. Here, we show that the resistive switching material structure, (amorphous TiOx)/(Ag nanoparticles)/(polycrystalline TiOx), fabricated on the textured-FTO substrate with ITO as the top electrode exhibits both the memory switching and threshold switching functions. When the device is used for resistive switching, it is forming-free for resistive memory applications with low operation voltage (
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank the Ministry of Science and Technology in Taiwan for financially supporting this research under Contract No. MOST 103-2622-E-002-031 and NSC 100-2112-M-002-019.