Dry via hole etching of GaAs using high-density Cl2/Ar plasma

Y. W. Chen; B. S. Ooi; G. I. Ng; K. Radhakrishnan; C. L. Tan

doi:10.1116/1.1289548

Dry via hole etching of GaAs using high-density Cl₂/Ar plasma

Y. W. Chen^*, B. S. Ooi, G. I. Ng, K. Radhakrishnan, C. L. Tan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Gallium arsenide (GaAs) is etched in an electron cyclotron resonance system using a Cl₂/Ar plasma. A high etch rate GaAs is used via hole processes to study the effects of process parameters on the resultant profiles. Results show that the GaAs etch increases as the Cl₂ percentage in the Cl₂/Ar plasmas.

Original language	English (US)
Pages (from-to)	2509-2512
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1289548
State	Published - Sep 2000
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1289548

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title = "Dry via hole etching of GaAs using high-density Cl2/Ar plasma",

abstract = "Gallium arsenide (GaAs) is etched in an electron cyclotron resonance system using a Cl2/Ar plasma. A high etch rate GaAs is used via hole processes to study the effects of process parameters on the resultant profiles. Results show that the GaAs etch increases as the Cl2 percentage in the Cl2/Ar plasmas.",

author = "Chen, {Y. W.} and Ooi, {B. S.} and Ng, {G. I.} and K. Radhakrishnan and Tan, {C. L.}",

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AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

AU - Radhakrishnan, K.

AU - Tan, C. L.

PY - 2000/9

Y1 - 2000/9

N2 - Gallium arsenide (GaAs) is etched in an electron cyclotron resonance system using a Cl2/Ar plasma. A high etch rate GaAs is used via hole processes to study the effects of process parameters on the resultant profiles. Results show that the GaAs etch increases as the Cl2 percentage in the Cl2/Ar plasmas.

AB - Gallium arsenide (GaAs) is etched in an electron cyclotron resonance system using a Cl2/Ar plasma. A high etch rate GaAs is used via hole processes to study the effects of process parameters on the resultant profiles. Results show that the GaAs etch increases as the Cl2 percentage in the Cl2/Ar plasmas.

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U2 - 10.1116/1.1289548

DO - 10.1116/1.1289548

M3 - Article

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SN - 1071-1023

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Dry via hole etching of GaAs using high-density Cl₂/Ar plasma

Abstract

ASJC Scopus subject areas

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