Dry plasma etching of GaAs vias in BCl3/Ar and Cl2/Ar plasmas

Y. W. Chen; B. S. Ooi; G. I. Ng; C. L. Tan; Y. C. Chan

Dry plasma etching of GaAs vias in BCl₃/Ar and Cl₂/Ar plasmas

Y. W. Chen^*, B. S. Ooi, G. I. Ng, C. L. Tan, Y. C. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report the development and characterizations of GaAs via hole processes using BCl₃/Ar and Cl₂/Ar plasmas generated by an electron cyclotron resonance (ECR) system. The effect of the in- and out-diffuse of the reactive species and etch by-products, of the BCl₃/Ar plasma, on the etch rate of the GaAs vias has been studied. The average GaAs etch rate was found to increase with increasing of both BCl₃ and Cl₂ flow rates. Under similar conditions, namely 800W microwave power, 150W RF power, 10sccm Ar flow rate, same (BCl₃ or Cl₂) flow rate, the etch rates of Cl₂/Ar plasma were found to be 7-16 times higher than those of BCl₃/Ar plasma. As the microwave power increased from 0 to 1500W, the etch rate increased by a factor of as large as 124 for the Cl₂/Ar process. Etch rate as high as 6.7μm/min was observed from sample etched in Cl₂/Ar plasma using a microwave power, RF power and process pressure of 800W, 150W and 50mTorr, respectively. Compared to the BCl₃/Ar plasma, Cl₂/Ar plasma is a better candidate, as this process gives higher etch rate and smoother etched surface.

Original language	English (US)
Pages (from-to)	199-206
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3896
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

@article{7ac126261bf94b0da30585730a0a9560,

title = "Dry plasma etching of GaAs vias in BCl3/Ar and Cl2/Ar plasmas",

abstract = "We report the development and characterizations of GaAs via hole processes using BCl3/Ar and Cl2/Ar plasmas generated by an electron cyclotron resonance (ECR) system. The effect of the in- and out-diffuse of the reactive species and etch by-products, of the BCl3/Ar plasma, on the etch rate of the GaAs vias has been studied. The average GaAs etch rate was found to increase with increasing of both BCl3 and Cl2 flow rates. Under similar conditions, namely 800W microwave power, 150W RF power, 10sccm Ar flow rate, same (BCl3 or Cl2) flow rate, the etch rates of Cl2/Ar plasma were found to be 7-16 times higher than those of BCl3/Ar plasma. As the microwave power increased from 0 to 1500W, the etch rate increased by a factor of as large as 124 for the Cl2/Ar process. Etch rate as high as 6.7μm/min was observed from sample etched in Cl2/Ar plasma using a microwave power, RF power and process pressure of 800W, 150W and 50mTorr, respectively. Compared to the BCl3/Ar plasma, Cl2/Ar plasma is a better candidate, as this process gives higher etch rate and smoother etched surface.",

author = "Chen, {Y. W.} and Ooi, {B. S.} and Ng, {G. I.} and Tan, {C. L.} and Chan, {Y. C.}",

year = "1999",

language = "English (US)",

volume = "3896",

pages = "199--206",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices ; Conference date: 30-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Dry plasma etching of GaAs vias in BCl3/Ar and Cl2/Ar plasmas

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

AU - Tan, C. L.

AU - Chan, Y. C.

PY - 1999

Y1 - 1999

N2 - We report the development and characterizations of GaAs via hole processes using BCl3/Ar and Cl2/Ar plasmas generated by an electron cyclotron resonance (ECR) system. The effect of the in- and out-diffuse of the reactive species and etch by-products, of the BCl3/Ar plasma, on the etch rate of the GaAs vias has been studied. The average GaAs etch rate was found to increase with increasing of both BCl3 and Cl2 flow rates. Under similar conditions, namely 800W microwave power, 150W RF power, 10sccm Ar flow rate, same (BCl3 or Cl2) flow rate, the etch rates of Cl2/Ar plasma were found to be 7-16 times higher than those of BCl3/Ar plasma. As the microwave power increased from 0 to 1500W, the etch rate increased by a factor of as large as 124 for the Cl2/Ar process. Etch rate as high as 6.7μm/min was observed from sample etched in Cl2/Ar plasma using a microwave power, RF power and process pressure of 800W, 150W and 50mTorr, respectively. Compared to the BCl3/Ar plasma, Cl2/Ar plasma is a better candidate, as this process gives higher etch rate and smoother etched surface.

AB - We report the development and characterizations of GaAs via hole processes using BCl3/Ar and Cl2/Ar plasmas generated by an electron cyclotron resonance (ECR) system. The effect of the in- and out-diffuse of the reactive species and etch by-products, of the BCl3/Ar plasma, on the etch rate of the GaAs vias has been studied. The average GaAs etch rate was found to increase with increasing of both BCl3 and Cl2 flow rates. Under similar conditions, namely 800W microwave power, 150W RF power, 10sccm Ar flow rate, same (BCl3 or Cl2) flow rate, the etch rates of Cl2/Ar plasma were found to be 7-16 times higher than those of BCl3/Ar plasma. As the microwave power increased from 0 to 1500W, the etch rate increased by a factor of as large as 124 for the Cl2/Ar process. Etch rate as high as 6.7μm/min was observed from sample etched in Cl2/Ar plasma using a microwave power, RF power and process pressure of 800W, 150W and 50mTorr, respectively. Compared to the BCl3/Ar plasma, Cl2/Ar plasma is a better candidate, as this process gives higher etch rate and smoother etched surface.

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M3 - Conference article

AN - SCOPUS:0033318949

SN - 0277-786X

VL - 3896

SP - 199

EP - 206

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices

Y2 - 30 November 1999 through 3 December 1999

ER -

Dry plasma etching of GaAs vias in BCl₃/Ar and Cl₂/Ar plasmas

Abstract

ASJC Scopus subject areas

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