Driving force behind voltage shifts in ferroelectric materials

W. L. Warren; H. N. Al-Shareef; D. Dimos; B. A. Tuttle; G. E. Pike

Driving force behind voltage shifts in ferroelectric materials

W. L. Warren^*, H. N. Al-Shareef, D. Dimos, B. A. Tuttle, G. E. Pike

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

By systematically poling Pb(Zr,Ti)O₃ capacitors to different extents, we observe a linear relationship between the remanent polarization and the magnitude of voltage offsets in the hysteresis curve. This result directly shows that the polarization is the impetus behind voltage shifts and, thus, imprint in ferroelectric capacitors. It is proposed that the increased polarization lowers the electrostatic potential well for the trapping of electrons thereby leading to greater voltage shifts. We also find that the remanent polarization and defect occupancy are temperature dependent which collectively impact the observed voltage offsets measured at elevated temperature.

Original language	English (US)
Pages (from-to)	1681
Number of pages	1
Journal	Applied Physics Letters
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

@article{24cbfd0ec958453cb9eabe1ff38ca567,

title = "Driving force behind voltage shifts in ferroelectric materials",

abstract = "By systematically poling Pb(Zr,Ti)O3 capacitors to different extents, we observe a linear relationship between the remanent polarization and the magnitude of voltage offsets in the hysteresis curve. This result directly shows that the polarization is the impetus behind voltage shifts and, thus, imprint in ferroelectric capacitors. It is proposed that the increased polarization lowers the electrostatic potential well for the trapping of electrons thereby leading to greater voltage shifts. We also find that the remanent polarization and defect occupancy are temperature dependent which collectively impact the observed voltage offsets measured at elevated temperature.",

author = "Warren, {W. L.} and Al-Shareef, {H. N.} and D. Dimos and Tuttle, {B. A.} and Pike, {G. E.}",

year = "1995",

language = "English (US)",

pages = "1681",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

}

TY - JOUR

T1 - Driving force behind voltage shifts in ferroelectric materials

AU - Warren, W. L.

AU - Al-Shareef, H. N.

AU - Dimos, D.

AU - Tuttle, B. A.

AU - Pike, G. E.

PY - 1995

Y1 - 1995

N2 - By systematically poling Pb(Zr,Ti)O3 capacitors to different extents, we observe a linear relationship between the remanent polarization and the magnitude of voltage offsets in the hysteresis curve. This result directly shows that the polarization is the impetus behind voltage shifts and, thus, imprint in ferroelectric capacitors. It is proposed that the increased polarization lowers the electrostatic potential well for the trapping of electrons thereby leading to greater voltage shifts. We also find that the remanent polarization and defect occupancy are temperature dependent which collectively impact the observed voltage offsets measured at elevated temperature.

AB - By systematically poling Pb(Zr,Ti)O3 capacitors to different extents, we observe a linear relationship between the remanent polarization and the magnitude of voltage offsets in the hysteresis curve. This result directly shows that the polarization is the impetus behind voltage shifts and, thus, imprint in ferroelectric capacitors. It is proposed that the increased polarization lowers the electrostatic potential well for the trapping of electrons thereby leading to greater voltage shifts. We also find that the remanent polarization and defect occupancy are temperature dependent which collectively impact the observed voltage offsets measured at elevated temperature.

UR - http://www.scopus.com/inward/record.url?scp=36449001850&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449001850

SN - 0003-6951

SP - 1681

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Driving force behind voltage shifts in ferroelectric materials

Abstract

ASJC Scopus subject areas

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