A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.
KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: M.L. and F.P.G.d.A. contributed equally to this work. This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund-Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada and the Connaught fund. The authors thank A. Ip, E. Palmiano, L. Levina, R. Wolowiec, and D. Kopilovic for their help over the course of this study.