Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

Mengxia Liu; F. Pelayo García de Arquer; Yiying Li; Xinzheng Lan; Gi-Hwan Kim; Oleksandr Voznyy; Lethy Krishnan Jagadamma; Abdullah Saud Abbas; Sjoerd Hoogland; Zhenghong Lu; Jin Young Kim; Aram Amassian; Edward H. Sargent

doi:10.1002/adma.201506213

Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

Mengxia Liu, F. Pelayo García de Arquer, Yiying Li, Xinzheng Lan, Gi-Hwan Kim, Oleksandr Voznyy, Lethy Krishnan Jagadamma, Abdullah Saud Abbas, Sjoerd Hoogland, Zhenghong Lu, Jin Young Kim, Aram Amassian, Edward H. Sargent

Research output: Contribution to journal › Article › peer-review

123 Scopus citations

Abstract

A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.

Original language	English (US)
Pages (from-to)	4142-4148
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	21
DOIs	https://doi.org/10.1002/adma.201506213
State	Published - Apr 1 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: M.L. and F.P.G.d.A. contributed equally to this work. This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund-Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada and the Connaught fund. The authors thank A. Ip, E. Palmiano, L. Levina, R. Wolowiec, and D. Kopilovic for their help over the course of this study.

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Cite this

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title = "Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics",

abstract = "A study is conducted to re-engineer the ZnO electrode to build a doublesided junction, one that includes not only a rectifying nCQD:pCQD junction in the quantum dot solid but also a strongly n+:n junction at the ZnO:nCQD interface. Researchers achieve this by incorporating In 3+ into ZnO, which allows them to simultaneously adjust its band structure and carrier concentration, ultimately benefiting colloidal quantum dots (CQDs) photovoltaic (PV) performance. The degenerately doped electrode forms a rectifying junction with the n-type CQD layer, and this increases the total depleted thickness within the CQD solid when the optimal doping density and electron affinity are achieved.",

author = "Mengxia Liu and {de Arquer}, {F. Pelayo Garc{\'i}a} and Yiying Li and Xinzheng Lan and Gi-Hwan Kim and Oleksandr Voznyy and Jagadamma, {Lethy Krishnan} and Abbas, {Abdullah Saud} and Sjoerd Hoogland and Zhenghong Lu and Kim, {Jin Young} and Aram Amassian and Sargent, {Edward H.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: M.L. and F.P.G.d.A. contributed equally to this work. This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund-Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada and the Connaught fund. The authors thank A. Ip, E. Palmiano, L. Levina, R. Wolowiec, and D. Kopilovic for their help over the course of this study.",

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Double-Sided Junctions Enable High-Performance Colloidal-Quantum-Dot Photovoltaics

Abstract

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