Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

K. Ohkawa; T. Karasawa; T. Mitsuyu

doi:10.1016/0022-0248(91)91084-N

Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

K. Ohkawa^*, T. Karasawa, T. Mitsuyu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

154 Scopus citations

Abstract

A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N₂ molecular radicals at A³σ⁺_u state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 10¹⁹ cm^-3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 10¹⁵ cm^-3. The activation of N in ZnSe was less than 1%.

Original language	English (US)
Pages (from-to)	797-801
Number of pages	5
Journal	Journal of Crystal Growth
Volume	111
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)91084-N
State	Published - May 2 1991
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth",

abstract = "A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N2 molecular radicals at A3σ+u state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 1019 cm-3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 1015 cm-3. The activation of N in ZnSe was less than 1%.",

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T1 - Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

AU - Ohkawa, K.

AU - Karasawa, T.

AU - Mitsuyu, T.

PY - 1991/5/2

Y1 - 1991/5/2

N2 - A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N2 molecular radicals at A3σ+u state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 1019 cm-3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 1015 cm-3. The activation of N in ZnSe was less than 1%.

AB - A new method of doping for ZnSe was attempted by using a neutral radical beam during the MBE growth. The radical beam dominantly consisted of N2 molecular radicals at A3σ+u state. The sticking coefficient of nitrogen was remarkably enhanced; thus this doping method was able to incorporate N into ZnSe by 1019 cm-3. The existence of shallow N acceptors was confirmed by photoluminescence measurements; recombination of free electrons and acceptor holes (FA) at room temperature and recombination of donor-acceptor pairs at low-temperature were observed. The FA emission was observed only for ZnSe layers with moderate doping level, which shows p-type conduction. The carrier concentration was the order of 1015 cm-3. The activation of N in ZnSe was less than 1%.

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DO - 10.1016/0022-0248(91)91084-N

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JO - Journal of Crystal Growth

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ER -

Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

Abstract

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