Doping monolayer graphene with single atom substitutions

Hongtao Wang, Qingxiao Wang, Yingchun Cheng, Kun Li, Yingbang Yao, Qiang Zhang, Cezhou Dong, Pengfei Wang, Udo Schwingenschlögl, Wei Yang, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

535 Scopus citations


Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)141-144
Number of pages4
JournalNano Letters
Issue number1
StatePublished - Dec 7 2011

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: H.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).

ASJC Scopus subject areas

  • Bioengineering
  • Materials Science(all)
  • Chemistry(all)
  • Mechanical Engineering
  • Condensed Matter Physics


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