Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: H.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).
ASJC Scopus subject areas
- Materials Science(all)
- Mechanical Engineering
- Condensed Matter Physics