Abstract
A means to control the net doping of a CQD solid is identified via the design of the bidentate ligand crosslinking the material. The strategy does not rely on implementing different atmospheres at different steps in device processing, but instead is a robust strategy implemented in a single processing ambient. We achieve an order of magnitude difference in doping that allows us to build a graded photovoltaic device and maintain high current and voltage at maximum power-point conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original language | English (US) |
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Pages (from-to) | 5586-5592 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 39 |
DOIs | |
State | Published - Aug 5 2013 |
Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. D. Zhitomirsky acknowledges the financial support through the NSERC CGS D Scholarship. We thank Angstrom Engineering and Innovative Technology for useful discussions regarding material deposition methods and control of glovebox environment, respectively. The authors would like to acknowledge the technical assistance and scientific guidance of E. Palmiano, R. Wolowiec, and D. Kopilovic.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.