Doped bismuth oxide thin films, electrochemical devices, methods of making, and use thereof

SEPÚLVEDA Adrián César CAVAZOS

Doped bismuth oxide thin films, electrochemical devices, methods of making, and use thereof

SEPÚLVEDA Adrián César CAVAZOS (Inventor)

Research output: Patent

Abstract

Embodiments of the present disclosure provide for electrochemical devices, methods of converting chemical energy to electrical energy, and the like.

Original language	English (US)
Patent number	WO2018037302A1
State	Published - Mar 1 2018

Bibliographical note

KAUST Repository Item: Exported on 2019-02-13

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https://repository.kaust.edu.sa/bitstream/10754/629715/1/WO2018037302A1.pdf

Cite this

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title = "Doped bismuth oxide thin films, electrochemical devices, methods of making, and use thereof",

abstract = "Embodiments of the present disclosure provide for electrochemical devices, methods of converting chemical energy to electrical energy, and the like.",

author = "CAVAZOS, {SEP{\'U}LVEDA Adri{\'a}n C{\'e}sar}",

note = "KAUST Repository Item: Exported on 2019-02-13; WO2018037302A1",

year = "2018",

month = mar,

day = "1",

language = "English (US)",

type = "Patent",

}

TY - PAT

T1 - Doped bismuth oxide thin films, electrochemical devices, methods of making, and use thereof

AU - CAVAZOS, SEPÚLVEDA Adrián César

N1 - KAUST Repository Item: Exported on 2019-02-13

PY - 2018/3/1

Y1 - 2018/3/1

N2 - Embodiments of the present disclosure provide for electrochemical devices, methods of converting chemical energy to electrical energy, and the like.

AB - Embodiments of the present disclosure provide for electrochemical devices, methods of converting chemical energy to electrical energy, and the like.

UR - http://hdl.handle.net/10754/629715

UR - https://patents.google.com/patent/WO2018037302A1/en

M3 - Patent

M1 - WO2018037302A1

ER -

Doped bismuth oxide thin films, electrochemical devices, methods of making, and use thereof

Abstract

Bibliographical note

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