Dominant factor determining the conduction-type of nitrogen-doped ZnO film

L. Li; C. X. Shan; X. T. Zhang; Y. M. Lu; B. D. Sun; X. Z. Ma; D. L. Jiang; T. Wu

doi:10.1166/jnn.2014.7977

Dominant factor determining the conduction-type of nitrogen-doped ZnO film

L. Li, C. X. Shan, X. T. Zhang, Y. M. Lu, B. D. Sun^*, X. Z. Ma, D. L. Jiang, T. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Nitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×10¹⁷ cm^-3. After an annealing process in O₂ at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film decreased to 6.8×10¹⁶ cm^-3. Secondary ion mass spectroscopy revealed that the concentration of both nitrogen and hydrogen decreased after the annealing process. It is demonstrated that the intrinsic compensation source has been decreased after the annealing process. Because the variation trend of the hole concentration in the ZnO:N film is opposite to that of hydrogen and intrinsic defects, but in good accordance with nitrogen, the extrinsically substituted nitrogen (N_O) should be the dominant factor that determines the conduction-type of the ZnO:N film.

Original language	English (US)
Pages (from-to)	3813-3816
Number of pages	4
Journal	Journal of nanoscience and nanotechnology
Volume	14
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2014.7977
State	Published - May 2014

Keywords

Doping
Molecular beam epitaxy
SIMS
ZnO

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2014.7977

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@article{c125a627166d4ea7b49bb56d95afe9a8,

title = "Dominant factor determining the conduction-type of nitrogen-doped ZnO film",

abstract = "Nitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×1017 cm-3. After an annealing process in O2 at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film decreased to 6.8×1016 cm-3. Secondary ion mass spectroscopy revealed that the concentration of both nitrogen and hydrogen decreased after the annealing process. It is demonstrated that the intrinsic compensation source has been decreased after the annealing process. Because the variation trend of the hole concentration in the ZnO:N film is opposite to that of hydrogen and intrinsic defects, but in good accordance with nitrogen, the extrinsically substituted nitrogen (NO) should be the dominant factor that determines the conduction-type of the ZnO:N film.",

keywords = "Doping, Molecular beam epitaxy, SIMS, ZnO",

author = "L. Li and Shan, {C. X.} and Zhang, {X. T.} and Lu, {Y. M.} and Sun, {B. D.} and Ma, {X. Z.} and Jiang, {D. L.} and T. Wu",

year = "2014",

month = may,

doi = "10.1166/jnn.2014.7977",

language = "English (US)",

volume = "14",

pages = "3813--3816",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "5",

}

TY - JOUR

T1 - Dominant factor determining the conduction-type of nitrogen-doped ZnO film

AU - Li, L.

AU - Shan, C. X.

AU - Zhang, X. T.

AU - Lu, Y. M.

AU - Sun, B. D.

AU - Ma, X. Z.

AU - Jiang, D. L.

AU - Wu, T.

PY - 2014/5

Y1 - 2014/5

N2 - Nitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×1017 cm-3. After an annealing process in O2 at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film decreased to 6.8×1016 cm-3. Secondary ion mass spectroscopy revealed that the concentration of both nitrogen and hydrogen decreased after the annealing process. It is demonstrated that the intrinsic compensation source has been decreased after the annealing process. Because the variation trend of the hole concentration in the ZnO:N film is opposite to that of hydrogen and intrinsic defects, but in good accordance with nitrogen, the extrinsically substituted nitrogen (NO) should be the dominant factor that determines the conduction-type of the ZnO:N film.

AB - Nitrogen-doped zinc oxide (ZnO) film has been grown by molecular beam epitaxy. The as-grown sample showed p-type conduction with a hole concentration of 3.1×1017 cm-3. After an annealing process in O2 at 600 °C for 30 min, p-type conduction was still remained, and the hole concentration of the film decreased to 6.8×1016 cm-3. Secondary ion mass spectroscopy revealed that the concentration of both nitrogen and hydrogen decreased after the annealing process. It is demonstrated that the intrinsic compensation source has been decreased after the annealing process. Because the variation trend of the hole concentration in the ZnO:N film is opposite to that of hydrogen and intrinsic defects, but in good accordance with nitrogen, the extrinsically substituted nitrogen (NO) should be the dominant factor that determines the conduction-type of the ZnO:N film.

KW - Doping

KW - Molecular beam epitaxy

KW - SIMS

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84897976976&partnerID=8YFLogxK

U2 - 10.1166/jnn.2014.7977

DO - 10.1166/jnn.2014.7977

M3 - Article

AN - SCOPUS:84897976976

SN - 1533-4880

VL - 14

SP - 3813

EP - 3816

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

IS - 5

ER -

Dominant factor determining the conduction-type of nitrogen-doped ZnO film

Abstract

Keywords

ASJC Scopus subject areas

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