Domain-related origin of magnetic relaxation in compressively strained manganite thin films

S. R. Bakaul; B. F. Miao; W. Lin; W. Hu; A. David; H. F. Ding; T. Wu

doi:10.1063/1.4733320

Domain-related origin of magnetic relaxation in compressively strained manganite thin films

S. R. Bakaul^*, B. F. Miao, W. Lin, W. Hu, A. David, H. F. Ding, T. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La _0.7Sr _0.3MnO ₃ thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.

Original language	English (US)
Article number	012408
Journal	Applied Physics Letters
Volume	101
Issue number	1
DOIs	https://doi.org/10.1063/1.4733320
State	Published - Jul 2 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La 0.7Sr 0.3MnO 3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.",

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AU - Bakaul, S. R.

AU - Miao, B. F.

AU - Lin, W.

AU - Hu, W.

AU - David, A.

AU - Ding, H. F.

AU - Wu, T.

PY - 2012/7/2

Y1 - 2012/7/2

N2 - Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La 0.7Sr 0.3MnO 3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.

AB - Magnetic relaxation is ubiquitous in magnetic materials, and elucidation of the underlying mechanisms is important for achieving reliable device operations. Here, we systematically investigate the magnetic relaxation in compressively strained La 0.7Sr 0.3MnO 3 thin films. Upon the removal of external magnetic field, the slow time-dependent increase of in-plane magnetization is correlated with the break-up of magnetic domains and the emergence of additional domain walls, whereas a reduction of magnetization for the initial short period dominates the magnetic relaxation at lower temperatures in thinner films. These relaxation effects underline the importance of domain dynamics in the properties of magnetic thin films.

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JO - Applied Physics Letters

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Domain-related origin of magnetic relaxation in compressively strained manganite thin films

Abstract

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