Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

Hu Chen; Michael Hurhangee; Mark Nikolka; Weimin Zhang; Mindaugas Kirkus; Marios Neophytou; Samuel J. Cryer; David Harkin; Pascal Hayoz; Mojtaba Abdi-Jalebi; Christopher R. McNeill; Henning Sirringhaus; Iain McCulloch

doi:10.1002/adma.201702523

Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

Hu Chen, Michael Hurhangee, Mark Nikolka, Weimin Zhang, Mindaugas Kirkus, Marios Neophytou, Samuel J. Cryer, David Harkin, Pascal Hayoz, Mojtaba Abdi-Jalebi, Christopher R. McNeill, Henning Sirringhaus, Iain McCulloch

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

Original language	English (US)
Pages (from-to)	1702523
Journal	Advanced Materials
Volume	29
Issue number	36
DOIs	https://doi.org/10.1002/adma.201702523
State	Published - Jul 21 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors thank KAUST and BASF for financial support and
acknowledge EC FP7 Project SC2 (610115) EC H2020 Project
SOLEDLIGHT (643791), and EPSRC Projects EP/G037515/1 and
EP/M005143/1. M.N. and H.S. acknowledge financial support from
the Engineering and Physical Sciences Research Council through a
Programme Grant (EP/M005141/1). M.A.J. gratefully acknowledges
Nava Technology Limited for a Ph.D. scholarship. The authors also
thank Mr. James Fraser for the help of synthesizing several intermediates
and Dr. Aditya Sadhanala for help with PDS measurements. C.R.M.
also acknowledges support from the Australian Research Council
(DP130102616). This research was undertaken in part on the SAXS/
WAXS beamline[26] at the Australian Synchrotron, Victoria, Australia.

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10.1002/adma.201702523

https://repository.kaust.edu.sa/bitstream/10754/625239/1/adma201702523_ToAU.pdf

Cite this

Chen, H., Hurhangee, M., Nikolka, M., Zhang, W., Kirkus, M., Neophytou, M., Cryer, S. J., Harkin, D., Hayoz, P., Abdi-Jalebi, M., McNeill, C. R., Sirringhaus, H., & McCulloch, I. (2017). Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors. Advanced Materials, 29(36), 1702523. https://doi.org/10.1002/adma.201702523

@article{86a71597aed644ef95083b74880f7ead,

title = "Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors",

abstract = "The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.",

author = "Hu Chen and Michael Hurhangee and Mark Nikolka and Weimin Zhang and Mindaugas Kirkus and Marios Neophytou and Cryer, {Samuel J.} and David Harkin and Pascal Hayoz and Mojtaba Abdi-Jalebi and McNeill, {Christopher R.} and Henning Sirringhaus and Iain McCulloch",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank KAUST and BASF for financial support and acknowledge EC FP7 Project SC2 (610115) EC H2020 Project SOLEDLIGHT (643791), and EPSRC Projects EP/G037515/1 and EP/M005143/1. M.N. and H.S. acknowledge financial support from the Engineering and Physical Sciences Research Council through a Programme Grant (EP/M005141/1). M.A.J. gratefully acknowledges Nava Technology Limited for a Ph.D. scholarship. The authors also thank Mr. James Fraser for the help of synthesizing several intermediates and Dr. Aditya Sadhanala for help with PDS measurements. C.R.M. also acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/ WAXS beamline[26] at the Australian Synchrotron, Victoria, Australia.",

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AU - Chen, Hu

AU - Hurhangee, Michael

AU - Nikolka, Mark

AU - Zhang, Weimin

AU - Kirkus, Mindaugas

AU - Neophytou, Marios

AU - Cryer, Samuel J.

AU - Harkin, David

AU - Hayoz, Pascal

AU - Abdi-Jalebi, Mojtaba

AU - McNeill, Christopher R.

AU - Sirringhaus, Henning

AU - McCulloch, Iain

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors thank KAUST and BASF for financial support and acknowledge EC FP7 Project SC2 (610115) EC H2020 Project SOLEDLIGHT (643791), and EPSRC Projects EP/G037515/1 and EP/M005143/1. M.N. and H.S. acknowledge financial support from the Engineering and Physical Sciences Research Council through a Programme Grant (EP/M005141/1). M.A.J. gratefully acknowledges Nava Technology Limited for a Ph.D. scholarship. The authors also thank Mr. James Fraser for the help of synthesizing several intermediates and Dr. Aditya Sadhanala for help with PDS measurements. C.R.M. also acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/ WAXS beamline[26] at the Australian Synchrotron, Victoria, Australia.

PY - 2017/7/21

Y1 - 2017/7/21

N2 - The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

AB - The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.

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JO - Advanced Materials

JF - Advanced Materials

IS - 36

ER -

Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

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