Distributed feedback lasers using surface gratings in Bragg waveguides

Bilal Janjua; Meng Lon Iu; Zhizhong Yan; Paul Charles; Eric Chen; Amr S. Helmy

doi:10.1364/OL.431292

Distributed feedback lasers using surface gratings in Bragg waveguides

Bilal Janjua, Meng Lon Iu, Zhizhong Yan, Paul Charles, Eric Chen, Amr S. Helmy

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This Letter presents, to the best of our knowledge, the first report of a narrow-linewidth ∼790−800 nm edge-emitting semiconductor distributed feedback Bragg reflection waveguide diode laser (DFB2RL). The DFB2RLs were fabricated using a ridge waveguide structure with 5th order, surface-etched grating forming the wavelength selective element. Unbonded devices with a 500 µm cavity length exhibited continuous wave threshold currents in the region of 25 mA with an output power of 2.5 mW per (uncoated) facet at 100 mA drive current. The devices operated in a single longitudinal mode, with side-mode suppression ratio (SMSR) as high as 49 dB and linewidths as low as 207 kHz. Devices maintained single mode operation with high SMSR over a 9 nm wavelength range as the temperature was swept from 15◦C to 50◦C.

Original language	English (US)
Pages (from-to)	3689-3692
Number of pages	4
Journal	Optics Letters
Volume	46
Issue number	15
DOIs	https://doi.org/10.1364/OL.431292
State	Published - Jul 27 2021
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2021-08-19
Acknowledged KAUST grant number(s): 501100004052, OSR-2017-CRG6-3417-02
Acknowledgements: Funding. King Abdullah University of Science and Technology (501100004052, OSR-2017-CRG6-3417-02).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OL.431292

Cite this

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title = "Distributed feedback lasers using surface gratings in Bragg waveguides",

abstract = "This Letter presents, to the best of our knowledge, the first report of a narrow-linewidth ∼790−800 nm edge-emitting semiconductor distributed feedback Bragg reflection waveguide diode laser (DFB2RL). The DFB2RLs were fabricated using a ridge waveguide structure with 5th order, surface-etched grating forming the wavelength selective element. Unbonded devices with a 500 µm cavity length exhibited continuous wave threshold currents in the region of 25 mA with an output power of 2.5 mW per (uncoated) facet at 100 mA drive current. The devices operated in a single longitudinal mode, with side-mode suppression ratio (SMSR) as high as 49 dB and linewidths as low as 207 kHz. Devices maintained single mode operation with high SMSR over a 9 nm wavelength range as the temperature was swept from 15◦C to 50◦C.",

author = "Bilal Janjua and Iu, {Meng Lon} and Zhizhong Yan and Paul Charles and Eric Chen and Helmy, {Amr S.}",

note = "KAUST Repository Item: Exported on 2021-08-19 Acknowledged KAUST grant number(s): 501100004052, OSR-2017-CRG6-3417-02 Acknowledgements: Funding. King Abdullah University of Science and Technology (501100004052, OSR-2017-CRG6-3417-02). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2021",

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doi = "10.1364/OL.431292",

language = "English (US)",

volume = "46",

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AU - Janjua, Bilal

AU - Iu, Meng Lon

AU - Yan, Zhizhong

AU - Charles, Paul

AU - Chen, Eric

AU - Helmy, Amr S.

N1 - KAUST Repository Item: Exported on 2021-08-19 Acknowledged KAUST grant number(s): 501100004052, OSR-2017-CRG6-3417-02 Acknowledgements: Funding. King Abdullah University of Science and Technology (501100004052, OSR-2017-CRG6-3417-02). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2021/7/27

Y1 - 2021/7/27

N2 - This Letter presents, to the best of our knowledge, the first report of a narrow-linewidth ∼790−800 nm edge-emitting semiconductor distributed feedback Bragg reflection waveguide diode laser (DFB2RL). The DFB2RLs were fabricated using a ridge waveguide structure with 5th order, surface-etched grating forming the wavelength selective element. Unbonded devices with a 500 µm cavity length exhibited continuous wave threshold currents in the region of 25 mA with an output power of 2.5 mW per (uncoated) facet at 100 mA drive current. The devices operated in a single longitudinal mode, with side-mode suppression ratio (SMSR) as high as 49 dB and linewidths as low as 207 kHz. Devices maintained single mode operation with high SMSR over a 9 nm wavelength range as the temperature was swept from 15◦C to 50◦C.

AB - This Letter presents, to the best of our knowledge, the first report of a narrow-linewidth ∼790−800 nm edge-emitting semiconductor distributed feedback Bragg reflection waveguide diode laser (DFB2RL). The DFB2RLs were fabricated using a ridge waveguide structure with 5th order, surface-etched grating forming the wavelength selective element. Unbonded devices with a 500 µm cavity length exhibited continuous wave threshold currents in the region of 25 mA with an output power of 2.5 mW per (uncoated) facet at 100 mA drive current. The devices operated in a single longitudinal mode, with side-mode suppression ratio (SMSR) as high as 49 dB and linewidths as low as 207 kHz. Devices maintained single mode operation with high SMSR over a 9 nm wavelength range as the temperature was swept from 15◦C to 50◦C.

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DO - 10.1364/OL.431292

M3 - Article

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SN - 1539-4794

VL - 46

SP - 3689

EP - 3692

JO - Optics Letters

JF - Optics Letters

IS - 15

ER -

Distributed feedback lasers using surface gratings in Bragg waveguides

Abstract

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