Abstract
Van der Waals heterostructures of (TMDL = 1/BNL = 1–4/TMDL = 1/BNL = 1–4), [TMD = MoS2, WS2, and ReS2] are grown on c-plane sapphire substrate by pulsed laser deposition (PLD) under slow kinetic condition. The heterostructure systems show strong emission around 2.3 eV and subsidiary peaks around 2.8, 1.9, 1.7, and 1.5 eV. BN and transition metal dichalcogenides (TMDs) form type-I heterojunction and the emission peaks observed are explained in terms of various band to band recombination processes and considering relative orientation of Brillouin zones. The emission peak around 2.3 eV is promising for solar and photovoltaic applications. The observation is almost similar for three different heterostructure systems.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1700691 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 255 |
| Issue number | 7 |
| DOIs | |
| State | Published - Apr 30 2018 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2022-06-08Acknowledgements: The authors at JNCASR sincerely acknowledge Prof. CNR Rao for advanced microscopy facility and ICMS for the funding. R. Datta thanks Dr. Somak Mitra and Iman Roqan at KAUST for some of the PL measurements.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
