Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor

Debarshi Basu; Liang Wang; Lawrence Dunn; Byungwook Yoo; Suvid Nadkarni; Ananth Dodabalapur; Martin Heeney; Iain McCulloch

doi:10.1063/1.2405378

Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor

Debarshi Basu, Liang Wang, Lawrence Dunn, Byungwook Yoo, Suvid Nadkarni, Ananth Dodabalapur, Martin Heeney, Iain McCulloch

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm2 V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility. © 2006 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	89
Issue number	24
DOIs	https://doi.org/10.1063/1.2405378
State	Published - Dec 29 2006
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2405378

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abstract = "An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm2 V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility. {\textcopyright} 2006 American Institute of Physics.",

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AU - Basu, Debarshi

AU - Wang, Liang

AU - Dunn, Lawrence

AU - Yoo, Byungwook

AU - Nadkarni, Suvid

AU - Dodabalapur, Ananth

AU - Heeney, Martin

AU - McCulloch, Iain

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2006/12/29

Y1 - 2006/12/29

N2 - An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm2 V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility. © 2006 American Institute of Physics.

AB - An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm2 V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility. © 2006 American Institute of Physics.

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor

Abstract

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