Direct measurement of carrier drift velocity and mobility in a polymer field-effect transistor

Debarshi Basu, Liang Wang, Lawrence Dunn, Byungwook Yoo, Suvid Nadkarni, Ananth Dodabalapur*, Martin Heeney, Iain McCulloch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


An electronic method to measure the drift velocity and mobility of charge carriers in polymer thin film transistor has been developed. The measurement is based on the movement of a packet of carriers injected into the channel. This technique can be used to explore trap states and therefore obtain a comprehensive understanding of charge transport in these materials. Drift mobility of 0.52 cm2 V s is obtained from the transit time which is a factor of 3 higher than the field-effect transistor mobility.

Original languageEnglish (US)
Article number242104
JournalApplied Physics Letters
Issue number24
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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