Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

Wen Chun Yen; Yu Ze Chen; Chao Hui Yeh; Jr Hau He; Po Wen Chiu; Yu Lun Chueh

doi:10.1038/srep04739

Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

Wen Chun Yen, Yu Ze Chen, Chao Hui Yeh, Jr Hau He, Po Wen Chiu, Yu Lun Chueh^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ∼12a €...nm at growth temperature of 1000°C to ∼32a €...nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

Original language	English (US)
Article number	4739
Journal	Scientific Reports
Volume	4
DOIs	https://doi.org/10.1038/srep04739
State	Published - May 9 2014
Externally published	Yes

Bibliographical note

Funding Information:
The research was supported by the Ministry of Science and Technology through grants no, 101-2112-M-007-015-MY3, 101-2218-E-007-009-MY3, 102-2633-M-007-002, and the National Tsing Hua University through Grant no. 102N2022E1. Y.L. Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through Grant no. 102N2744E1.

ASJC Scopus subject areas

General

Access to Document

10.1038/srep04739

Cite this

@article{49148279d5ce4086b287b2cbb6160289,

title = "Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization",

abstract = "A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ∼12a €...nm at growth temperature of 1000°C to ∼32a €...nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.",

author = "Yen, {Wen Chun} and Chen, {Yu Ze} and Yeh, {Chao Hui} and He, {Jr Hau} and Chiu, {Po Wen} and Chueh, {Yu Lun}",

note = "Funding Information: The research was supported by the Ministry of Science and Technology through grants no, 101-2112-M-007-015-MY3, 101-2218-E-007-009-MY3, 102-2633-M-007-002, and the National Tsing Hua University through Grant no. 102N2022E1. Y.L. Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through Grant no. 102N2744E1.",

year = "2014",

month = may,

day = "9",

doi = "10.1038/srep04739",

language = "English (US)",

volume = "4",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth

T2 - From controllable growth to material characterization

AU - Yen, Wen Chun

AU - Chen, Yu Ze

AU - Yeh, Chao Hui

AU - He, Jr Hau

AU - Chiu, Po Wen

AU - Chueh, Yu Lun

N1 - Funding Information: The research was supported by the Ministry of Science and Technology through grants no, 101-2112-M-007-015-MY3, 101-2218-E-007-009-MY3, 102-2633-M-007-002, and the National Tsing Hua University through Grant no. 102N2022E1. Y.L. Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through Grant no. 102N2744E1.

PY - 2014/5/9

Y1 - 2014/5/9

N2 - A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ∼12a €...nm at growth temperature of 1000°C to ∼32a €...nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

AB - A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ∼12a €...nm at growth temperature of 1000°C to ∼32a €...nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

UR - http://www.scopus.com/inward/record.url?scp=84901008711&partnerID=8YFLogxK

U2 - 10.1038/srep04739

DO - 10.1038/srep04739

M3 - Article

C2 - 24810224

AN - SCOPUS:84901008711

SN - 2045-2322

VL - 4

JO - Scientific Reports

JF - Scientific Reports

M1 - 4739

ER -

Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this