A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ∼12a €...nm at growth temperature of 1000°C to ∼32a €...nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.
Bibliographical noteFunding Information:
The research was supported by the Ministry of Science and Technology through grants no, 101-2112-M-007-015-MY3, 101-2218-E-007-009-MY3, 102-2633-M-007-002, and the National Tsing Hua University through Grant no. 102N2022E1. Y.L. Chueh greatly appreciates the use of facility at CNMM, National Tsing Hua University through Grant no. 102N2744E1.
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