Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

Chao Zhao; Tien Khee Ng; Nini Wei; Aditya Prabaswara; Mohd Sharizal Bin Alias; Bilal Janjua; Chao Shen; Giuseppe Bernardo Consiglio; Ahmed Y. Alyamani; Munir M. El-Desouki; Boon Ooi

Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

Chao Zhao, Tien Khee Ng, Nini Wei, Aditya Prabaswara, Mohd Sharizal Bin Alias, Bilal Janjua, Chao Shen, Giuseppe Bernardo Consiglio, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon Ooi

Computer, Electrical and Mathematical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.

Original language	English (US)
Title of host publication	2016 Conference on Lasers and Electro-Optics (CLEO)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
State	Published - Dec 19 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-04-23
Acknowledged KAUST grant number(s): CRG-1-2012-OOI-010.
Acknowledgements: The work is supported by KAUST under baseline funding and Competitive Research Grant CRG-1-2012-OOI-010. We acknowledge the
financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008

Cite this

Zhao, C., Ng, T. K., Wei, N., Prabaswara, A., Bin Alias, M. S., Janjua, B., Shen, C., Consiglio, G. B., Alyamani, A. Y., El-Desouki, M. M., & Ooi, B. (2016). Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates. In 2016 Conference on Lasers and Electro-Optics (CLEO) Institute of Electrical and Electronics Engineers (IEEE).

@inproceedings{b3db1f4969ee4526a1599f3e217d7081,

title = "Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates",

abstract = "The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.",

author = "Chao Zhao and Ng, {Tien Khee} and Nini Wei and Aditya Prabaswara and {Bin Alias}, {Mohd Sharizal} and Bilal Janjua and Chao Shen and Consiglio, {Giuseppe Bernardo} and Alyamani, {Ahmed Y.} and El-Desouki, {Munir M.} and Boon Ooi",

note = "KAUST Repository Item: Exported on 2020-04-23 Acknowledged KAUST grant number(s): CRG-1-2012-OOI-010. Acknowledgements: The work is supported by KAUST under baseline funding and Competitive Research Grant CRG-1-2012-OOI-010. We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008",

year = "2016",

month = dec,

day = "19",

language = "English (US)",

booktitle = "2016 Conference on Lasers and Electro-Optics (CLEO)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Zhao, C, Ng, TK, Wei, N, Prabaswara, A, Bin Alias, MS, Janjua, B, Shen, C, Consiglio, GB, Alyamani, AY, El-Desouki, MM & Ooi, B 2016, Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates. in 2016 Conference on Lasers and Electro-Optics (CLEO). Institute of Electrical and Electronics Engineers (IEEE).

Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates. / Zhao, Chao; Ng, Tien Khee; Wei, Nini et al.

2016 Conference on Lasers and Electro-Optics (CLEO). Institute of Electrical and Electronics Engineers (IEEE), 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

AU - Zhao, Chao

AU - Ng, Tien Khee

AU - Wei, Nini

AU - Prabaswara, Aditya

AU - Bin Alias, Mohd Sharizal

AU - Janjua, Bilal

AU - Shen, Chao

AU - Consiglio, Giuseppe Bernardo

AU - Alyamani, Ahmed Y.

AU - El-Desouki, Munir M.

AU - Ooi, Boon

N1 - KAUST Repository Item: Exported on 2020-04-23 Acknowledged KAUST grant number(s): CRG-1-2012-OOI-010. Acknowledgements: The work is supported by KAUST under baseline funding and Competitive Research Grant CRG-1-2012-OOI-010. We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008

PY - 2016/12/19

Y1 - 2016/12/19

N2 - The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.

AB - The first high-power InGaN/GaN quantum-disks-in-nanowires red (λ=705 nm) light-emitting diodes on metal substrates was demonstrated. The low turn-on voltage and high power were achieved through the direct growth of high-quality nanowires on TiN/Ti/Mo stack.

UR - http://hdl.handle.net/10754/656066

UR - https://ieeexplore.ieee.org/document/7789120/

M3 - Conference contribution

AN - SCOPUS:85010703409

BT - 2016 Conference on Lasers and Electro-Optics (CLEO)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Direct growth of high-power InGaN/GaN quantum-disks-in-nanowires red light-emitting diodes on polycrystalline molybdenum substrates

Abstract

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