Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

J. J. Davies, D. Wolverson, S. Strauf, P. Michler, J. Gutowski, M. Klude, K. Ohkawa, D. Hommel, E. Tournié, J. P. Faurie

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7 Scopus citations


Spin-flip Raman scattering has been used to provide direct experimental evidence that shallow phosphorus acceptors in relaxed ZnSe epitaxial layers grown on GaAs lie at sites of predominantly trigonal local symmetry. As a consequence, the energy of the heavy-hole bound exciton is about 0.45 meV less than that of the light exciton. This splitting is significantly smaller than (and of opposite sign and different symmetry to) the valence-band splitting of 3 meV observed due to the macroscopic biaxial tensile strain in the same specimens. The behavior is in complete contrast to that of nitrogen acceptors, for which no trigonal field is observed. The experiments provide confirmation of the behavior predicted by previous pseudopotential total-energy calculations for the shallow acceptor states formed by these two different group-V dopants when substituting at selenium sites.

Original languageEnglish (US)
Article number205206
Pages (from-to)2052061-2052065
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - Nov 15 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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