Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning

P. D. Kirsch; P. Sivasubramani; J. Huang; C. D. Young; M. A. Quevedo-Lopez; H. C. Wen; H. Alshareef; K. Choi; C. S. Park; K. Freeman; M. M. Hussain; G. Bersuker; H. R. Harris; P. Majhi; R. Choi; P. Lysaght; B. H. Lee; H. H. Tseng; R. Jammy; T. S. Böscke; D. J. Lichtenwalner; J. S. Jur; A. I. Kingon

doi:10.1063/1.2890056

Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning

P. D. Kirsch^*, P. Sivasubramani, J. Huang, C. D. Young, M. A. Quevedo-Lopez, H. C. Wen, H. Alshareef, K. Choi, C. S. Park, K. Freeman, M. M. Hussain, G. Bersuker, H. R. Harris, P. Majhi, R. Choi, P. Lysaght, B. H. Lee, H. H. Tseng, R. Jammy, T. S. BösckeD. J. Lichtenwalner, J. S. Jur, A. I. Kingon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

182 Scopus citations

Abstract

An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr<Er<Sc+Er<La<Sc<none. This Vt ordering is very similar to the trends in dopant electronegativity (EN) (dipole charge transfer) and ionic radius (r) (dipole separation) expected for a interfacial dipole mechanism. The resulting Vt dependence on RE dopant allows distinction between a dipole model (dependent on EN and r) and an oxygen vacancy model (dependent on valence).

Original language	English (US)
Article number	092901
Journal	Applied Physics Letters
Volume	92
Issue number	9
DOIs	https://doi.org/10.1063/1.2890056
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kirsch, P. D., Sivasubramani, P., Huang, J., Young, C. D., Quevedo-Lopez, M. A., Wen, H. C., Alshareef, H., Choi, K., Park, C. S., Freeman, K., Hussain, M. M., Bersuker, G., Harris, H. R., Majhi, P., Choi, R., Lysaght, P., Lee, B. H., Tseng, H. H., Jammy, R., ... Kingon, A. I. (2008). Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning. Applied Physics Letters, 92(9), Article 092901. https://doi.org/10.1063/1.2890056

@article{b75c87aa5c52448da955955204562de3,

title = "Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning",

abstract = "An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr",

author = "Kirsch, {P. D.} and P. Sivasubramani and J. Huang and Young, {C. D.} and Quevedo-Lopez, {M. A.} and Wen, {H. C.} and H. Alshareef and K. Choi and Park, {C. S.} and K. Freeman and Hussain, {M. M.} and G. Bersuker and Harris, {H. R.} and P. Majhi and R. Choi and P. Lysaght and Lee, {B. H.} and Tseng, {H. H.} and R. Jammy and B{\"o}scke, {T. S.} and Lichtenwalner, {D. J.} and Jur, {J. S.} and Kingon, {A. I.}",

year = "2008",

doi = "10.1063/1.2890056",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "9",

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Kirsch, PD, Sivasubramani, P, Huang, J, Young, CD, Quevedo-Lopez, MA, Wen, HC, Alshareef, H, Choi, K, Park, CS, Freeman, K, Hussain, MM, Bersuker, G, Harris, HR, Majhi, P, Choi, R, Lysaght, P, Lee, BH, Tseng, HH, Jammy, R, Böscke, TS, Lichtenwalner, DJ, Jur, JS & Kingon, AI 2008, 'Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning', Applied Physics Letters, vol. 92, no. 9, 092901. https://doi.org/10.1063/1.2890056

TY - JOUR

T1 - Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning

AU - Kirsch, P. D.

AU - Sivasubramani, P.

AU - Huang, J.

AU - Young, C. D.

AU - Quevedo-Lopez, M. A.

AU - Wen, H. C.

AU - Alshareef, H.

AU - Choi, K.

AU - Park, C. S.

AU - Freeman, K.

AU - Hussain, M. M.

AU - Bersuker, G.

AU - Harris, H. R.

AU - Majhi, P.

AU - Choi, R.

AU - Lysaght, P.

AU - Lee, B. H.

AU - Tseng, H. H.

AU - Jammy, R.

AU - Böscke, T. S.

AU - Lichtenwalner, D. J.

AU - Jur, J. S.

AU - Kingon, A. I.

PY - 2008

Y1 - 2008

N2 - An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr

AB - An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n -channel field effect transistors (nFETs) is proposed. Vt tuning depends on rare earth (RE) type and diffusion in SiSi Ox HfSiON REOx /metal gated nFETs as follows: Sr

UR - http://www.scopus.com/inward/record.url?scp=40549096055&partnerID=8YFLogxK

U2 - 10.1063/1.2890056

DO - 10.1063/1.2890056

M3 - Article

AN - SCOPUS:40549096055

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092901

ER -

Dipole model explaining high-k /metal gate field effect transistor threshold voltage tuning

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