Dimethyl indium ditertiarybutyl phosphine: A novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy

D. A. Andrews, G. J. Davies, D. C. Bradley, M. M. Faktor, D. M. Frigo, E. A.D. White

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The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine.
Original languageEnglish (US)
JournalSemiconductor Science and Technology
Issue number10
StatePublished - Dec 1 1988
Externally publishedYes

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