Dimethyl indium ditertiarybutyl phosphine: A novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy

D. A. Andrews; G. J. Davies; D. C. Bradley; M. M. Faktor; D. M. Frigo; E. A.D. White

doi:10.1088/0268-1242/3/10/016

Dimethyl indium ditertiarybutyl phosphine: A novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy

D. A. Andrews, G. J. Davies, D. C. Bradley, M. M. Faktor, D. M. Frigo, E. A.D. White

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32 Scopus citations

Abstract

The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine.

Original language	English (US)
Journal	Semiconductor Science and Technology
Volume	3
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/3/10/016
State	Published - Dec 1 1988
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2019-11-27

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title = "Dimethyl indium ditertiarybutyl phosphine: A novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy",

abstract = "The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine.",

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T1 - Dimethyl indium ditertiarybutyl phosphine: A novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy

AU - Andrews, D. A.

AU - Davies, G. J.

AU - Bradley, D. C.

AU - Faktor, M. M.

AU - Frigo, D. M.

AU - White, E. A.D.

N1 - Generated from Scopus record by KAUST IRTS on 2019-11-27

PY - 1988/12/1

Y1 - 1988/12/1

N2 - The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine.

AB - The authors report preliminary results on the use of a novel metal-organic precursor molecule-dimethyl indium ditertiarybutyl phosphine-for the co-evaporated growth of epitaxial indium phosphide by metal-organic molecular beam epitaxy. It is shown that indium-rich growth occurs at all substrate temperatures studied but that stoichiometric growth is only possible at 480 degrees C with simultaneous incident flux of dissociated phosphine.

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DO - 10.1088/0268-1242/3/10/016

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VL - 3

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

ER -

Dimethyl indium ditertiarybutyl phosphine: A novel precursor for the growth of indium phosphide by metal-organic molecular beam epitaxy

Abstract

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