Memristors-based memories utilize the memristor's resistance programmability and small structure to realize high density non-volatile memories. This programmability arises from the dependence of the memristor's resistance on the magnetic flux and total charge, rather than the voltage and current passing through it. However, a critical requirement in memory applications is that the reading scheme should preserve the memristor state after the read. In this paper, we propose a robust reading scheme for memristor-based memories that uses a differential pair sensing amplifier. © 2013 IEEE.
|Original language||English (US)|
|Title of host publication||Proceedings - IEEE International Symposium on Circuits and Systems|
|Number of pages||4|
|State||Published - Sep 9 2013|