Dielectric properties of PMMA-SiO2 hybrid films

M. D. Morales-Acosta; Manuel Angel Quevedo Quevedo-López; Husam N. Alshareef; Bruce E. Gnade; Rafael Ramírez-Bon

doi:10.4028/www.scientific.net/MSF.644.25

Dielectric properties of PMMA-SiO2 hybrid films

M. D. Morales-Acosta, Manuel Angel Quevedo Quevedo-López, Husam N. Alshareef, Bruce E. Gnade, Rafael Ramírez-Bon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

Original language	English (US)
Title of host publication	Materials Science Forum
Publisher	Trans Tech Publications
Pages	25-28
Number of pages	4
ISBN (Print)	087849281X; 9780878492817
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.644.25
State	Published - Mar 2010

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@inproceedings{c065962546514c58a8e255bbf953cc39,

title = "Dielectric properties of PMMA-SiO2 hybrid films",

abstract = "Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. {\textcopyright} (2010) Trans Tech Publications.",

author = "Morales-Acosta, {M. D.} and Quevedo-L{\'o}pez, {Manuel Angel Quevedo} and Alshareef, {Husam N.} and Gnade, {Bruce E.} and Rafael Ram{\'i}rez-Bon",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2010",

month = mar,

doi = "10.4028/www.scientific.net/MSF.644.25",

language = "English (US)",

isbn = "087849281X; 9780878492817",

pages = "25--28",

booktitle = "Materials Science Forum",

publisher = "Trans Tech Publications",

}

TY - GEN

T1 - Dielectric properties of PMMA-SiO2 hybrid films

AU - Morales-Acosta, M. D.

AU - Quevedo-López, Manuel Angel Quevedo

AU - Alshareef, Husam N.

AU - Gnade, Bruce E.

AU - Ramírez-Bon, Rafael

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2010/3

Y1 - 2010/3

N2 - Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

AB - Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.

UR - http://hdl.handle.net/10754/564274

UR - https://www.scientific.net/MSF.644.25

UR - http://www.scopus.com/inward/record.url?scp=77951014738&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.644.25

DO - 10.4028/www.scientific.net/MSF.644.25

M3 - Conference contribution

SN - 087849281X; 9780878492817

SP - 25

EP - 28

BT - Materials Science Forum

PB - Trans Tech Publications

ER -

Dielectric properties of PMMA-SiO2 hybrid films

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