DFT modeling of silver disorder and mobility in the semiconductor cluster [Ag28S26(P(O)PhOMe)12(PPh3) 12]

Nathan R.M. Crawford, Claudia Schrodt, Alexander Rothenberger, Weifeng Shi, Reinhart Ahlrichs*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Disorder of silver atoms and high cation mobility are commonly observed and closely coupled features in silver chalcogenides, The ligand-stabilized cluster [Ag286-S)2(ArP(O)S2) 12-(PPh3)12] (1) (Ar = 4-anisyl), with a total of 666 atoms, displays in its X-ray structure highly localized disorder at two core silver atoms. To explore the nature of this disorder, we have applied density functional methods to its internal structure and flexibility. The pseudo-S6 symmetry of the cluster provides six equivalent pockets to place the pair of silver atoms, and with the exception of populating neighboring sites, all permutations relax to structures with similar cores. The barrier to concerted motion of the central silver atoms from one set of pockets to the next of the Ci-symmetric conformer is estimated to be less than about 26 kJ mol-1. Cluster 1 can be considered a model for bulk phase cation mobility.

Original languageEnglish (US)
Pages (from-to)319-324
Number of pages6
JournalChemistry - A European Journal
Volume14
Issue number1
DOIs
StatePublished - 2008
Externally publishedYes

Keywords

  • Clusters
  • Crystallographic
  • Density functional calculations
  • Disorder
  • Molecular dynamics
  • Semiconductors
  • Silver sulfide

ASJC Scopus subject areas

  • Catalysis
  • Organic Chemistry

Fingerprint

Dive into the research topics of 'DFT modeling of silver disorder and mobility in the semiconductor cluster [Ag28S26(P(O)PhOMe)12(PPh3) 12]'. Together they form a unique fingerprint.

Cite this