Device properties of homo- and heteroepitaxial ZnSe-based laser diodes

Helmut Wenisch; Martin Behringer; Michael Fehrer; Matthias Klude; Andreas Isemann; Kazuhiro Ohkawa; Detlef Hommel

doi:10.1143/jjap.38.2590

Device properties of homo- and heteroepitaxial ZnSe-based laser diodes

Helmut Wenisch^*, Martin Behringer, Michael Fehrer, Matthias Klude, Andreas Isemann, Kazuhiro Ohkawa, Detlef Hommel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

The characteristics of ZnSe-based laser diodes grown on GaAs and ZnSe substrates are discussed. There is no significant difference observed in the dynamic behavior and in the operating voltages between the two cases. The degradation mechanism is similar with the developing of dark line defects and a 1/t-like decrease in light intensity at constant current for t → ∞. The width of the dark line defects is in homoepitaxy almost constant in time, although their number is higher. This difference is also reflected in the lifetimes of our devices during lasing, which is in heteroepitaxy three minutes and about one second in homoepitaxy, for both in cw operation at room temperature.

Original language	English (US)
Pages (from-to)	2590-2597
Number of pages	8
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.38.2590
State	Published - 1999
Externally published	Yes

Keywords

Dark line defects
Dark spot defects
Device characteristics
Heteroepitaxy
Homoepitaxy
Laser diodes
Lifetime
Light emitting diodes
ZnSe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.38.2590

Cite this

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title = "Device properties of homo- and heteroepitaxial ZnSe-based laser diodes",

abstract = "The characteristics of ZnSe-based laser diodes grown on GaAs and ZnSe substrates are discussed. There is no significant difference observed in the dynamic behavior and in the operating voltages between the two cases. The degradation mechanism is similar with the developing of dark line defects and a 1/t-like decrease in light intensity at constant current for t → ∞. The width of the dark line defects is in homoepitaxy almost constant in time, although their number is higher. This difference is also reflected in the lifetimes of our devices during lasing, which is in heteroepitaxy three minutes and about one second in homoepitaxy, for both in cw operation at room temperature.",

keywords = "Dark line defects, Dark spot defects, Device characteristics, Heteroepitaxy, Homoepitaxy, Laser diodes, Lifetime, Light emitting diodes, ZnSe",

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volume = "38",

pages = "2590--2597",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Device properties of homo- and heteroepitaxial ZnSe-based laser diodes

AU - Wenisch, Helmut

AU - Behringer, Martin

AU - Fehrer, Michael

AU - Klude, Matthias

AU - Isemann, Andreas

AU - Ohkawa, Kazuhiro

AU - Hommel, Detlef

PY - 1999

Y1 - 1999

N2 - The characteristics of ZnSe-based laser diodes grown on GaAs and ZnSe substrates are discussed. There is no significant difference observed in the dynamic behavior and in the operating voltages between the two cases. The degradation mechanism is similar with the developing of dark line defects and a 1/t-like decrease in light intensity at constant current for t → ∞. The width of the dark line defects is in homoepitaxy almost constant in time, although their number is higher. This difference is also reflected in the lifetimes of our devices during lasing, which is in heteroepitaxy three minutes and about one second in homoepitaxy, for both in cw operation at room temperature.

AB - The characteristics of ZnSe-based laser diodes grown on GaAs and ZnSe substrates are discussed. There is no significant difference observed in the dynamic behavior and in the operating voltages between the two cases. The degradation mechanism is similar with the developing of dark line defects and a 1/t-like decrease in light intensity at constant current for t → ∞. The width of the dark line defects is in homoepitaxy almost constant in time, although their number is higher. This difference is also reflected in the lifetimes of our devices during lasing, which is in heteroepitaxy three minutes and about one second in homoepitaxy, for both in cw operation at room temperature.

KW - Dark line defects

KW - Dark spot defects

KW - Device characteristics

KW - Heteroepitaxy

KW - Homoepitaxy

KW - Laser diodes

KW - Lifetime

KW - Light emitting diodes

KW - ZnSe

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U2 - 10.1143/jjap.38.2590

DO - 10.1143/jjap.38.2590

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Device properties of homo- and heteroepitaxial ZnSe-based laser diodes

Abstract

Keywords

ASJC Scopus subject areas

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