Developments in AlGaN and UV-C LEDs grown on SiC

Burhan Saifaddin; Christian J. Zollner; Abdullah Almogbel; Humberto Foronda; Feng Wu; Abdulrahman Albadri; Ahmed Al Yamani; Michael Iza; Shuji Nakamura; Steven P. DenBaars; James S. Speck

doi:10.1117/12.2317660

Developments in AlGaN and UV-C LEDs grown on SiC

Burhan Saifaddin, Christian J. Zollner, Abdullah Almogbel, Humberto Foronda, Feng Wu, Abdulrahman Albadri, Ahmed Al Yamani, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

Original language	English (US)
Title of host publication	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII
Publisher	SPIE
ISBN (Print)	9781510615939
DOIs	https://doi.org/10.1117/12.2317660
State	Published - Feb 15 2018
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-28
Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. The authors also would like to thank the support of the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR05-20415). This work was also supported by the National Science Foundation Graduate Research Fellowship Program (Grant No. 1650114).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1117/12.2317660

Cite this

@inproceedings{37b48fd4911c437394cf548e137700e1,

title = "Developments in AlGaN and UV-C LEDs grown on SiC",

abstract = "AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.",

author = "Burhan Saifaddin and Zollner, {Christian J.} and Abdullah Almogbel and Humberto Foronda and Feng Wu and Abdulrahman Albadri and {Al Yamani}, Ahmed and Michael Iza and Shuji Nakamura and DenBaars, {Steven P.} and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2022-06-28 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. The authors also would like to thank the support of the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR05-20415). This work was also supported by the National Science Foundation Graduate Research Fellowship Program (Grant No. 1650114). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2018",

month = feb,

day = "15",

doi = "10.1117/12.2317660",

language = "English (US)",

isbn = "9781510615939",

booktitle = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII",

publisher = "SPIE",

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TY - GEN

T1 - Developments in AlGaN and UV-C LEDs grown on SiC

AU - Saifaddin, Burhan

AU - Zollner, Christian J.

AU - Almogbel, Abdullah

AU - Foronda, Humberto

AU - Wu, Feng

AU - Albadri, Abdulrahman

AU - Al Yamani, Ahmed

AU - Iza, Michael

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2022-06-28 Acknowledgements: This work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. The authors also would like to thank the support of the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR05-20415). This work was also supported by the National Science Foundation Graduate Research Fellowship Program (Grant No. 1650114). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2018/2/15

Y1 - 2018/2/15

N2 - AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

AB - AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

UR - http://hdl.handle.net/10754/679399

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10554/2317660/Developments-in-AlGaN-and-UV-C-LEDs-grown-on-SiC/10.1117/12.2317660.full

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U2 - 10.1117/12.2317660

DO - 10.1117/12.2317660

M3 - Conference contribution

SN - 9781510615939

BT - Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII

PB - SPIE

ER -

Developments in AlGaN and UV-C LEDs grown on SiC

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