Development of slurry concentration adjustable tungsten chemical mechanical planarization process

X. B. Wang; J. B. Tan; P. S. Tan; Charles Lin; H. J. Zhao

doi:10.1109/ASMC.2000.902622

Development of slurry concentration adjustable tungsten chemical mechanical planarization process

X. B. Wang, J. B. Tan, P. S. Tan, Charles Lin, H. J. Zhao

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical mechanical planarization (CMP) process. This paper investigates the impacts of flowrate and concentration variation of tungsten CMP slurry. The slurry concentration adjustable tungsten CMP process is described. Finally, physical characterization and electrical results are presented. We demonstrate that the new process yields a significant improvement on the oxide erosion and a remarkable reduction in the cost of consumables.

Original language	English (US)
Title of host publication	2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
Subtitle of host publication	"Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	422-424
Number of pages	3
Volume	2000-January
ISBN (Electronic)	0780359216
DOIs	https://doi.org/10.1109/ASMC.2000.902622
State	Published - 2000
Externally published	Yes
Event	11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000 - Boston, United States Duration: Sep 12 2000 → Sep 14 2000

Other

Other	11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000
Country/Territory	United States
City	Boston
Period	09/12/00 → 09/14/00

Keywords

Chemical industry
Chemical technology
Costs
Manufacturing processes
Planarization
Plugs
Pulp manufacturing
Semiconductor device manufacture
Slurries
Tungsten

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ASMC.2000.902622

Cite this

Wang, X. B., Tan, J. B., Tan, P. S., Lin, C., & Zhao, H. J. (2000). Development of slurry concentration adjustable tungsten chemical mechanical planarization process. In 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop: "Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings (Vol. 2000-January, pp. 422-424). Article 902622 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASMC.2000.902622

Wang, X. B. ; Tan, J. B. ; Tan, P. S. et al. / Development of slurry concentration adjustable tungsten chemical mechanical planarization process. 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop: "Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. pp. 422-424

@inproceedings{a63f4284cbe0419a96091f8fe0bc26b8,

title = "Development of slurry concentration adjustable tungsten chemical mechanical planarization process",

abstract = "Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical mechanical planarization (CMP) process. This paper investigates the impacts of flowrate and concentration variation of tungsten CMP slurry. The slurry concentration adjustable tungsten CMP process is described. Finally, physical characterization and electrical results are presented. We demonstrate that the new process yields a significant improvement on the oxide erosion and a remarkable reduction in the cost of consumables.",

keywords = "Chemical industry, Chemical technology, Costs, Manufacturing processes, Planarization, Plugs, Pulp manufacturing, Semiconductor device manufacture, Slurries, Tungsten",

author = "Wang, {X. B.} and Tan, {J. B.} and Tan, {P. S.} and Charles Lin and Zhao, {H. J.}",

year = "2000",

doi = "10.1109/ASMC.2000.902622",

language = "English (US)",

volume = "2000-January",

pages = "422--424",

booktitle = "2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000 ; Conference date: 12-09-2000 Through 14-09-2000",

}

Wang, XB, Tan, JB, Tan, PS, Lin, C & Zhao, HJ 2000, Development of slurry concentration adjustable tungsten chemical mechanical planarization process. in 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop: "Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings. vol. 2000-January, 902622, Institute of Electrical and Electronics Engineers Inc., pp. 422-424, 11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000, Boston, United States, 09/12/00. https://doi.org/10.1109/ASMC.2000.902622

Development of slurry concentration adjustable tungsten chemical mechanical planarization process. / Wang, X. B.; Tan, J. B.; Tan, P. S. et al.
2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop: "Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 422-424 902622.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Development of slurry concentration adjustable tungsten chemical mechanical planarization process

AU - Wang, X. B.

AU - Tan, J. B.

AU - Tan, P. S.

AU - Lin, Charles

AU - Zhao, H. J.

PY - 2000

Y1 - 2000

N2 - Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical mechanical planarization (CMP) process. This paper investigates the impacts of flowrate and concentration variation of tungsten CMP slurry. The slurry concentration adjustable tungsten CMP process is described. Finally, physical characterization and electrical results are presented. We demonstrate that the new process yields a significant improvement on the oxide erosion and a remarkable reduction in the cost of consumables.

AB - Understanding the interaction of slurry component and concentration with polishing condition is necessary for developing a tightly controlled chemical mechanical planarization (CMP) process. This paper investigates the impacts of flowrate and concentration variation of tungsten CMP slurry. The slurry concentration adjustable tungsten CMP process is described. Finally, physical characterization and electrical results are presented. We demonstrate that the new process yields a significant improvement on the oxide erosion and a remarkable reduction in the cost of consumables.

KW - Chemical industry

KW - Chemical technology

KW - Costs

KW - Manufacturing processes

KW - Planarization

KW - Plugs

KW - Pulp manufacturing

KW - Semiconductor device manufacture

KW - Slurries

KW - Tungsten

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U2 - 10.1109/ASMC.2000.902622

DO - 10.1109/ASMC.2000.902622

M3 - Conference contribution

AN - SCOPUS:84949756108

VL - 2000-January

SP - 422

EP - 424

BT - 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 2000

Y2 - 12 September 2000 through 14 September 2000

ER -

Wang XB, Tan JB, Tan PS, Lin C, Zhao HJ. Development of slurry concentration adjustable tungsten chemical mechanical planarization process. In 2000 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop: "Advancing the Science of Semiconductor Manufacturing Excellence", ASMC 2000 Proceedings. Vol. 2000-January. Institute of Electrical and Electronics Engineers Inc. 2000. p. 422-424. 902622 doi: 10.1109/ASMC.2000.902622

Development of slurry concentration adjustable tungsten chemical mechanical planarization process

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