Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 μm

I. Raptis; M. Gentili; E. Di Fabrizio; R. Maggiora; M. Baciocchi; L. Grella; L. Mastrogiacomo

doi:10.1016/0167-9317(94)00137-J

Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 μm

I. Raptis^*, M. Gentili, E. Di Fabrizio, R. Maggiora, M. Baciocchi, L. Grella, L. Mastrogiacomo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper it is presented a study on the process optimization for an e-beam sensitive commercial chemically amplified negative resist, the Shipley SAL 601-ER 7, used for fabrication of gold X-ray masks with CD down to 0.15 μm and complexity equivalent to that of 1 Gbit DRAM. The study includes the effect of pre-baking and post-baking thermal processes on resolution, exposure latitude and resist contrast. It is demonstrated that by using 105 °C temperature for pre- and post-exposure baking, 0.15 μm lines spaced of 0.15 μm can be achieved with an aspect ratio exceeding 4. Resist process is also successfully exploited for fabrication of a gold additive x-ray mask.

Original language	English (US)
Pages (from-to)	417-420
Number of pages	4
Journal	Microelectronic Engineering
Volume	27
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(94)00137-J
State	Published - Feb 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(94)00137-J

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@article{758cede1eb944fdd941bd99e5f24bead,

title = "Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 μm",

abstract = "In this paper it is presented a study on the process optimization for an e-beam sensitive commercial chemically amplified negative resist, the Shipley SAL 601-ER 7, used for fabrication of gold X-ray masks with CD down to 0.15 μm and complexity equivalent to that of 1 Gbit DRAM. The study includes the effect of pre-baking and post-baking thermal processes on resolution, exposure latitude and resist contrast. It is demonstrated that by using 105 °C temperature for pre- and post-exposure baking, 0.15 μm lines spaced of 0.15 μm can be achieved with an aspect ratio exceeding 4. Resist process is also successfully exploited for fabrication of a gold additive x-ray mask.",

author = "I. Raptis and M. Gentili and {Di Fabrizio}, E. and R. Maggiora and M. Baciocchi and L. Grella and L. Mastrogiacomo",

year = "1995",

month = feb,

doi = "10.1016/0167-9317(94)00137-J",

language = "English (US)",

volume = "27",

pages = "417--420",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 μm

AU - Raptis, I.

AU - Gentili, M.

AU - Di Fabrizio, E.

AU - Maggiora, R.

AU - Baciocchi, M.

AU - Grella, L.

AU - Mastrogiacomo, L.

PY - 1995/2

Y1 - 1995/2

N2 - In this paper it is presented a study on the process optimization for an e-beam sensitive commercial chemically amplified negative resist, the Shipley SAL 601-ER 7, used for fabrication of gold X-ray masks with CD down to 0.15 μm and complexity equivalent to that of 1 Gbit DRAM. The study includes the effect of pre-baking and post-baking thermal processes on resolution, exposure latitude and resist contrast. It is demonstrated that by using 105 °C temperature for pre- and post-exposure baking, 0.15 μm lines spaced of 0.15 μm can be achieved with an aspect ratio exceeding 4. Resist process is also successfully exploited for fabrication of a gold additive x-ray mask.

AB - In this paper it is presented a study on the process optimization for an e-beam sensitive commercial chemically amplified negative resist, the Shipley SAL 601-ER 7, used for fabrication of gold X-ray masks with CD down to 0.15 μm and complexity equivalent to that of 1 Gbit DRAM. The study includes the effect of pre-baking and post-baking thermal processes on resolution, exposure latitude and resist contrast. It is demonstrated that by using 105 °C temperature for pre- and post-exposure baking, 0.15 μm lines spaced of 0.15 μm can be achieved with an aspect ratio exceeding 4. Resist process is also successfully exploited for fabrication of a gold additive x-ray mask.

UR - http://www.scopus.com/inward/record.url?scp=0029251925&partnerID=8YFLogxK

U2 - 10.1016/0167-9317(94)00137-J

DO - 10.1016/0167-9317(94)00137-J

M3 - Article

AN - SCOPUS:0029251925

SN - 0167-9317

VL - 27

SP - 417

EP - 420

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Development of a fast and high resolution e-beam process for the fabrication of X-ray masks with CD of 0.15 μm

Abstract

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