Deterministic Current Induced Magnetic Switching Without External Field using Giant Spin Hall Effect of β-W

Wenzhe Chen; Lijuan Qian; Gang Xiao

doi:10.1038/s41598-018-26586-z

Deterministic Current Induced Magnetic Switching Without External Field using Giant Spin Hall Effect of β-W

Wenzhe Chen, Lijuan Qian, Gang Xiao

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Giant spin Hall effect (GSHE) has received significant attention for its potential in future spintronic applications. Spin current via GSHE-based thin films provides an effective and promising means to manipulate magnetization. However, an external in-plane magnetic field is required to consistently switch the perpendicular magnetic moment. We present an approach to realize field-free deterministic perpendicular magnetic switching with a new structure of FM/NM/FM. Our method takes advantage of the large spin Hall angle of transition metal β-W, so that the critical switching current density is only on the order of 106A/cm2 in the absence of magnetic field.

Original language	English (US)
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-26586-z
State	Published - May 25 2018
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We thank Shu Wang for technical assistance. This work was supported by National Science Foundation through Grants No. DMR-1307056 and by Nanoelectronics Research Initiative (NRI) through the Institute for Nanoelectronics Discovery and Exploration (INDEX).The research reported in this publication was also supported by research funding from King Abdullah University of Science and Technology (KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Deterministic Current Induced Magnetic Switching Without External Field using Giant Spin Hall Effect of β-W",

abstract = "Giant spin Hall effect (GSHE) has received significant attention for its potential in future spintronic applications. Spin current via GSHE-based thin films provides an effective and promising means to manipulate magnetization. However, an external in-plane magnetic field is required to consistently switch the perpendicular magnetic moment. We present an approach to realize field-free deterministic perpendicular magnetic switching with a new structure of FM/NM/FM. Our method takes advantage of the large spin Hall angle of transition metal β-W, so that the critical switching current density is only on the order of 106A/cm2 in the absence of magnetic field.",

author = "Wenzhe Chen and Lijuan Qian and Gang Xiao",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank Shu Wang for technical assistance. This work was supported by National Science Foundation through Grants No. DMR-1307056 and by Nanoelectronics Research Initiative (NRI) through the Institute for Nanoelectronics Discovery and Exploration (INDEX).The research reported in this publication was also supported by research funding from King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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doi = "10.1038/s41598-018-26586-z",

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AU - Qian, Lijuan

AU - Xiao, Gang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We thank Shu Wang for technical assistance. This work was supported by National Science Foundation through Grants No. DMR-1307056 and by Nanoelectronics Research Initiative (NRI) through the Institute for Nanoelectronics Discovery and Exploration (INDEX).The research reported in this publication was also supported by research funding from King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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N2 - Giant spin Hall effect (GSHE) has received significant attention for its potential in future spintronic applications. Spin current via GSHE-based thin films provides an effective and promising means to manipulate magnetization. However, an external in-plane magnetic field is required to consistently switch the perpendicular magnetic moment. We present an approach to realize field-free deterministic perpendicular magnetic switching with a new structure of FM/NM/FM. Our method takes advantage of the large spin Hall angle of transition metal β-W, so that the critical switching current density is only on the order of 106A/cm2 in the absence of magnetic field.

AB - Giant spin Hall effect (GSHE) has received significant attention for its potential in future spintronic applications. Spin current via GSHE-based thin films provides an effective and promising means to manipulate magnetization. However, an external in-plane magnetic field is required to consistently switch the perpendicular magnetic moment. We present an approach to realize field-free deterministic perpendicular magnetic switching with a new structure of FM/NM/FM. Our method takes advantage of the large spin Hall angle of transition metal β-W, so that the critical switching current density is only on the order of 106A/cm2 in the absence of magnetic field.

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Deterministic Current Induced Magnetic Switching Without External Field using Giant Spin Hall Effect of β-W

Abstract

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