Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs

W. J. Fan; S. F. Yoon; W. K. Cheah; W. K. Loke; T. K. Ng; S. Z. Wang; R. Liu; A. Wee

doi:10.1016/j.jcrysgro.2004.04.074

Determination of nitrogen composition in GaN_xAs_1-x epilayer on GaAs

W. J. Fan^*, S. F. Yoon, W. K. Cheah, W. K. Loke, T. K. Ng, S. Z. Wang, R. Liu, A. Wee

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

26 Scopus citations

Abstract

High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x<3%), deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the x_SIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.

Original language	English (US)
Pages (from-to)	470-474
Number of pages	5
Journal	Journal of Crystal Growth
Volume	268
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.074
State	Published - Aug 1 2004
Externally published	Yes
Event	ICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore Duration: Dec 7 2003 → Dec 12 2004

Keywords

A1. High resolution X-ray diffraction
A1. Secondary-ion mass spectroscopy
A3. Molecular beam epitaxy
B1. GaAsN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2004.04.074

Cite this

@article{02c8e9d37313499e816546aabd8b1867,

title = "Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs",

abstract = "High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x<3%), deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.",

keywords = "A1. High resolution X-ray diffraction, A1. Secondary-ion mass spectroscopy, A3. Molecular beam epitaxy, B1. GaAsN",

author = "Fan, {W. J.} and Yoon, {S. F.} and Cheah, {W. K.} and Loke, {W. K.} and Ng, {T. K.} and Wang, {S. Z.} and R. Liu and A. Wee",

year = "2004",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2004.04.074",

language = "English (US)",

volume = "268",

pages = "470--474",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4 SPEC. ISS.",

note = "ICMAT 2003, Symposium H, Compound Semiconductors in Electronic ; Conference date: 07-12-2003 Through 12-12-2004",

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TY - JOUR

T1 - Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs

AU - Fan, W. J.

AU - Yoon, S. F.

AU - Cheah, W. K.

AU - Loke, W. K.

AU - Ng, T. K.

AU - Wang, S. Z.

AU - Liu, R.

AU - Wee, A.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x<3%), deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.

AB - High-resolution X-ray diffraction (HRXRD) and secondary-ion mass spectroscopy (SIMS) were used to measure the N compositions of a series of as-grown GaNAs samples grown by solid-source molecular-beam epitaxy. We found that for the coherent samples, N compositions measured by the two methods agree well at lower N compositions (x<3%), deviate at larger N compositions (x>3%). The HRXRD measurement by using Vegard's law to extract the lattice constant of GaNAs underestimates N composition at larger N compositions. We found that the underestimation is 8.1% at the xSIMS=3.7%. Partially strain relaxed samples were also studied by using (115) XRD mapping. The strain relaxation may cause N composition underestimated by XRD.

KW - A1. High resolution X-ray diffraction

KW - A1. Secondary-ion mass spectroscopy

KW - A3. Molecular beam epitaxy

KW - B1. GaAsN

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U2 - 10.1016/j.jcrysgro.2004.04.074

DO - 10.1016/j.jcrysgro.2004.04.074

M3 - Conference article

AN - SCOPUS:3142696300

SN - 0022-0248

VL - 268

SP - 470

EP - 474

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4 SPEC. ISS.

T2 - ICMAT 2003, Symposium H, Compound Semiconductors in Electronic

Y2 - 7 December 2003 through 12 December 2004

ER -