Determination of band offsets of Ga$_{2}$O$_{3}$/FTO heterojunction for current spreading applications

Carlos Gerardo Torres Castanedo; Kuanghui Li; Laurentiu Braic; Xiaohang Li

doi:10.1088/1361-6463/ab8518

Determination of band offsets of Ga$_{2}$O$_{3}$/FTO heterojunction for current spreading applications

Carlos Gerardo Torres Castanedo, Kuanghui Li, Laurentiu Braic, Xiaohang Li

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.

Original language	English (US)
Journal	Journal of Physics D: Applied Physics
Volume	53
Issue number	31
DOIs	https://doi.org/10.1088/1361-6463/ab8518
State	Published - Apr 1 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01

Access to Document

10.1088/1361-6463/ab8518

https://repository.kaust.edu.sa/bitstream/10754/662421/1/Determination%20of_Torres%2bCastanedo%2bet%2bal_2020_J._Phys._D__Appl._Phys._10.1088_1361-6463_ab8518.pdf

Cite this

@article{cc18b49d142a4a7e96aa4c4a9ee5fa57,

title = "Determination of band offsets of Ga$_{2}$O$_{3}$/FTO heterojunction for current spreading applications",

abstract = "Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.",

author = "{Torres Castanedo}, {Carlos Gerardo} and Kuanghui Li and Laurentiu Braic and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01",

year = "2020",

month = apr,

day = "1",

doi = "10.1088/1361-6463/ab8518",

language = "English (US)",

volume = "53",

journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

publisher = "IOP Publishing Ltd.",

number = "31",

}

TY - JOUR

T1 - Determination of band offsets of Ga$_{2}$O$_{3}$/FTO heterojunction for current spreading applications

AU - Torres Castanedo, Carlos Gerardo

AU - Li, Kuanghui

AU - Braic, Laurentiu

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REP/1/3189-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01

PY - 2020/4/1

Y1 - 2020/4/1

N2 - Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.

AB - Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11±0.10 and 0.42±0.10 eV, indicating a minor barrier for electron transport and a type-I heterojunction. The subsequent I-V measurement of the Ga2O3/FTO heterojunction exhibited ohmic behavior. The results of this work manifests excellent candidacy of FTO for current spreading layers of Ga2O3 devices for high temperature and UV applications.

UR - http://hdl.handle.net/10754/662421

UR - https://iopscience.iop.org/article/10.1088/1361-6463/ab8518

UR - http://www.scopus.com/inward/record.url?scp=85086460836&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/ab8518

DO - 10.1088/1361-6463/ab8518

M3 - Article

SN - 0022-3727

VL - 53

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 31

ER -

Determination of band offsets of Ga$_{2}$O$_{3}$/FTO heterojunction for current spreading applications

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this