Determination of band offsets at GaN/single-layer MoS2 heterojunction

Malleswararao Tangi, Pawan Mishra, Tien Khee Ng, Mohamed N. Hedhili, Bilal Janjua, Mohd Sharizal Alias, Dalaver H. Anjum, Chien-Chih Tseng, Yumeng Shi, Hannah J. Joyce, Lain-Jong Li, Boon S. Ooi

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We report the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD deposited SL-MoS2/c-sapphire. We confirm that the MoS2 is an SL by measuring the separation and position of room temperature micro-Raman E1 2g and A1 g modes, absorbance, and micro-photoluminescence bandgap studies. This is in good agreement with HRTEM cross-sectional analysis. The determination of band offset parameters at the GaN/SL-MoS2 heterojunction is carried out by high-resolution X-ray photoelectron spectroscopy accompanying with electronic bandgap values of SL-MoS2 and GaN. The valence band and conduction band offset values are, respectively, measured to be 1.86 ± 0.08 and 0.56 ± 0.1 eV with type II band alignment. The determination of these unprecedented band offset parameters opens up a way to integrate 3D group III nitride materials with 2D transition metal dichalcogenide layers for designing and modeling of their heterojunction based electronic and photonic devices.
Original languageEnglish (US)
Pages (from-to)032104
JournalApplied Physics Letters
Issue number3
StatePublished - Jul 20 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST) Grant No. KACST TIC R2-FP-008 and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).


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