Abstract
The design and operation of ambipolar transistors and inverters were studied. In order to gain insights in the operation of ambipolar inverters an analytical model was developed which describes the electrical behavior of ambipolar transistors and inverters. The model was compared to experimentally realized inorganic and organic ambipolar thin-film transistors and inverters. Furthermore, the influence of the transistor parameters on the voltage transfer characteristics and the static noise margin are discussed. The model provides a general description which is applicable to a variety of ambipolar transistor technologies based on different material systems.
Original language | English (US) |
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Pages (from-to) | 2816-2824 |
Number of pages | 9 |
Journal | Organic Electronics |
Volume | 13 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2012 |
Externally published | Yes |
Keywords
- Ambipolar inverters
- Ambipolar transistors
- Analytical model
- Complementary metal-oxide semiconductor inverters
- Static noise margin
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering