Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources

Chen Shang; Eamonn T. Hughes; Matthew R. Begley; Rosalyn Koscica; Marc Fouchier; Kaiyin Feng; William He; Yating Wan; Gerald Leake; Peter Ludewig; John E. Bowers

doi:10.1002/adfm.202304645

Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources

Chen Shang^*, Eamonn T. Hughes, Matthew R. Begley, Rosalyn Koscica, Marc Fouchier, Kaiyin Feng, William He, Yating Wan, Gerald Leake, Peter Ludewig, John E. Bowers

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in the last few years. Recently, electrically pumped QD lasers deposited in narrow oxide pockets in a butt-coupled configuration and on-chip coupling have been realized on patterned Si photonic wafers. However, the device yield and reliability, which ultimately determines the scalability of such technology, are limited by material uniformity. Here, detailed analysis is performed, both experimentally and theoretically, on the material asymmetry induced by the pocket geometry and provides unambiguous evidence suggesting that all pockets should be aligned to the [1 (Formula presented.)] direction of the III-V crystal for high yield, high performance, and scalable on-chip light sources at 300 mm scale.

Original language	English (US)
Article number	2304645
Journal	Advanced Functional Materials
Volume	33
Issue number	45
DOIs	https://doi.org/10.1002/adfm.202304645
State	Accepted/In press - 2023

Bibliographical note

Funding Information:
The authors thank Prof. Chris Palmstrom for the fruitful discussions on crystal orientations. This material is based on research sponsored by the DARPA MTO LUMOS program under contract 442650–59747 and by Air Force Research Laboratory under agreement number FA8650‐21‐2‐1000. The U.S. Government is authorized to reproduce and distribute reprints for Governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, by DARPA of the United States Air Force, the Air Force Research Laboratory, or the U.S. Government.

Publisher Copyright:
© 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.

Keywords

device reliability
heteroepitaxy
monolithic integration
quantum dot laser on Si
Si photonics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Biomaterials
General Materials Science
Condensed Matter Physics
Electrochemistry

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10.1002/adfm.202304645

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Shang, C., Hughes, E. T., Begley, M. R., Koscica, R., Fouchier, M., Feng, K., He, W., Wan, Y., Leake, G., Ludewig, P., & Bowers, J. E. (Accepted/In press). Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources. Advanced Functional Materials, 33(45), Article 2304645. https://doi.org/10.1002/adfm.202304645

@article{f1875f727092475cae15ab4c77e7324a,

title = "Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources",

abstract = "Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in the last few years. Recently, electrically pumped QD lasers deposited in narrow oxide pockets in a butt-coupled configuration and on-chip coupling have been realized on patterned Si photonic wafers. However, the device yield and reliability, which ultimately determines the scalability of such technology, are limited by material uniformity. Here, detailed analysis is performed, both experimentally and theoretically, on the material asymmetry induced by the pocket geometry and provides unambiguous evidence suggesting that all pockets should be aligned to the [1 (Formula presented.)] direction of the III-V crystal for high yield, high performance, and scalable on-chip light sources at 300 mm scale.",

keywords = "device reliability, heteroepitaxy, monolithic integration, quantum dot laser on Si, Si photonics",

author = "Chen Shang and Hughes, {Eamonn T.} and Begley, {Matthew R.} and Rosalyn Koscica and Marc Fouchier and Kaiyin Feng and William He and Yating Wan and Gerald Leake and Peter Ludewig and Bowers, {John E.}",

note = "Funding Information: The authors thank Prof. Chris Palmstrom for the fruitful discussions on crystal orientations. This material is based on research sponsored by the DARPA MTO LUMOS program under contract 442650–59747 and by Air Force Research Laboratory under agreement number FA8650‐21‐2‐1000. The U.S. Government is authorized to reproduce and distribute reprints for Governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, by DARPA of the United States Air Force, the Air Force Research Laboratory, or the U.S. Government. Publisher Copyright: {\textcopyright} 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.",

year = "2023",

doi = "10.1002/adfm.202304645",

language = "English (US)",

volume = "33",

journal = "Advanced Functional Materials",

issn = "1616-301X",

publisher = "Wiley",

number = "45",

}

TY - JOUR

T1 - Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources

AU - Shang, Chen

AU - Hughes, Eamonn T.

AU - Begley, Matthew R.

AU - Koscica, Rosalyn

AU - Fouchier, Marc

AU - Feng, Kaiyin

AU - He, William

AU - Wan, Yating

AU - Leake, Gerald

AU - Ludewig, Peter

AU - Bowers, John E.

N1 - Funding Information: The authors thank Prof. Chris Palmstrom for the fruitful discussions on crystal orientations. This material is based on research sponsored by the DARPA MTO LUMOS program under contract 442650–59747 and by Air Force Research Laboratory under agreement number FA8650‐21‐2‐1000. The U.S. Government is authorized to reproduce and distribute reprints for Governmental purposes notwithstanding any copyright notation thereon. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, by DARPA of the United States Air Force, the Air Force Research Laboratory, or the U.S. Government. Publisher Copyright: © 2023 The Authors. Advanced Functional Materials published by Wiley-VCH GmbH.

PY - 2023

Y1 - 2023

N2 - Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in the last few years. Recently, electrically pumped QD lasers deposited in narrow oxide pockets in a butt-coupled configuration and on-chip coupling have been realized on patterned Si photonic wafers. However, the device yield and reliability, which ultimately determines the scalability of such technology, are limited by material uniformity. Here, detailed analysis is performed, both experimentally and theoretically, on the material asymmetry induced by the pocket geometry and provides unambiguous evidence suggesting that all pockets should be aligned to the [1 (Formula presented.)] direction of the III-V crystal for high yield, high performance, and scalable on-chip light sources at 300 mm scale.

AB - Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on-chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in the last few years. Recently, electrically pumped QD lasers deposited in narrow oxide pockets in a butt-coupled configuration and on-chip coupling have been realized on patterned Si photonic wafers. However, the device yield and reliability, which ultimately determines the scalability of such technology, are limited by material uniformity. Here, detailed analysis is performed, both experimentally and theoretically, on the material asymmetry induced by the pocket geometry and provides unambiguous evidence suggesting that all pockets should be aligned to the [1 (Formula presented.)] direction of the III-V crystal for high yield, high performance, and scalable on-chip light sources at 300 mm scale.

KW - device reliability

KW - heteroepitaxy

KW - monolithic integration

KW - quantum dot laser on Si

KW - Si photonics

UR - http://www.scopus.com/inward/record.url?scp=85164141452&partnerID=8YFLogxK

U2 - 10.1002/adfm.202304645

DO - 10.1002/adfm.202304645

M3 - Article

AN - SCOPUS:85164141452

SN - 1616-301X

VL - 33

JO - Advanced Functional Materials

JF - Advanced Functional Materials

IS - 45

M1 - 2304645

ER -

Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On-Chip Light Sources

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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