Design of ohmic contacts between Janus MoSSe and two-dimensional metals

Ning Zhao, Shubham Tyagi, Udo Schwingenschlögl*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Two-dimensional semiconductors are considered as channel materials for field-effect transistors to overcome short-channel effects and reduce the device size. As the contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics.

Original languageEnglish (US)
Article number71
JournalNPG Asia Materials
Volume15
Issue number1
DOIs
StatePublished - Dec 2023

Bibliographical note

Publisher Copyright:
© 2023, The Author(s).

ASJC Scopus subject areas

  • Modeling and Simulation
  • General Materials Science
  • Condensed Matter Physics

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