Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

H. P. Zhao; G. Y. Liu; X. H. Li; R. A. Arif; G. S. Huang; J. D. Poplawsky; S. Tafon Penn; V. Dierolf; N. Tansu

doi:10.1049/iet-opt.2009.0050

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, N. Tansu

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520-525nm. Based on a self-consistent six-band k·p method, band structures of both two-layer staggered In_xGa_1-xN/ In_yGa_1-yN QW and three-layer staggered In _yGa_1-yN/In_xGa_1-xN/In _yGa_1-yN QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate (R_sp) for LEDs emitting at 520-525nm. Numerical analysis shows significant enhancement of R_sp for both two-layer and three-layer staggered InGaN QWs as compared to that of the conventional In_zGa_1-zN QW. Significant reduction of the radiative carrier lifetime contributes to the enhancement of the radiative efficiency for both two-layer and three-layer staggered InGaN QW LEDs emitting at 520-525nm. Three-layer staggered InGaN QW LEDs emitting at 520-525nm was grown by metal-organic chemical vapour deposition (MOCVD) by employing gradederature profile. Power density-dependent cathodoluminescence (CL) measurements show the enhancement of peak luminescence by up to 3 times and integrated luminescence by 1.8-2.8 times for the three-layer staggered InGaN QW LED. Electroluminescence (EL) output power of the staggered InGaN QW LED exhibits 2.0-3.5 times enhancement as compared to that of the conventional InGaN QW LED. The experimental results show the good agreement with theory.

Original language	English (US)
Pages (from-to)	283-295
Number of pages	13
Journal	IET Optoelectronics
Volume	3
Issue number	6
DOIs	https://doi.org/10.1049/iet-opt.2009.0050
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1049/iet-opt.2009.0050

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title = "Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime",

abstract = "Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520-525nm. Based on a self-consistent six-band k·p method, band structures of both two-layer staggered InxGa1-xN/ InyGa1-yN QW and three-layer staggered In yGa1-yN/InxGa1-xN/In yGa1-yN QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate (Rsp) for LEDs emitting at 520-525nm. Numerical analysis shows significant enhancement of Rsp for both two-layer and three-layer staggered InGaN QWs as compared to that of the conventional InzGa1-zN QW. Significant reduction of the radiative carrier lifetime contributes to the enhancement of the radiative efficiency for both two-layer and three-layer staggered InGaN QW LEDs emitting at 520-525nm. Three-layer staggered InGaN QW LEDs emitting at 520-525nm was grown by metal-organic chemical vapour deposition (MOCVD) by employing gradederature profile. Power density-dependent cathodoluminescence (CL) measurements show the enhancement of peak luminescence by up to 3 times and integrated luminescence by 1.8-2.8 times for the three-layer staggered InGaN QW LED. Electroluminescence (EL) output power of the staggered InGaN QW LED exhibits 2.0-3.5 times enhancement as compared to that of the conventional InGaN QW LED. The experimental results show the good agreement with theory.",

author = "Zhao, {H. P.} and Liu, {G. Y.} and Li, {X. H.} and Arif, {R. A.} and Huang, {G. S.} and Poplawsky, {J. D.} and {Tafon Penn}, S. and V. Dierolf and N. Tansu",

year = "2009",

doi = "10.1049/iet-opt.2009.0050",

language = "English (US)",

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journal = "IET Optoelectronics",

issn = "1751-8768",

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T1 - Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

AU - Zhao, H. P.

AU - Liu, G. Y.

AU - Li, X. H.

AU - Arif, R. A.

AU - Huang, G. S.

AU - Poplawsky, J. D.

AU - Tafon Penn, S.

AU - Dierolf, V.

AU - Tansu, N.

PY - 2009

Y1 - 2009

N2 - Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520-525nm. Based on a self-consistent six-band k·p method, band structures of both two-layer staggered InxGa1-xN/ InyGa1-yN QW and three-layer staggered In yGa1-yN/InxGa1-xN/In yGa1-yN QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate (Rsp) for LEDs emitting at 520-525nm. Numerical analysis shows significant enhancement of Rsp for both two-layer and three-layer staggered InGaN QWs as compared to that of the conventional InzGa1-zN QW. Significant reduction of the radiative carrier lifetime contributes to the enhancement of the radiative efficiency for both two-layer and three-layer staggered InGaN QW LEDs emitting at 520-525nm. Three-layer staggered InGaN QW LEDs emitting at 520-525nm was grown by metal-organic chemical vapour deposition (MOCVD) by employing gradederature profile. Power density-dependent cathodoluminescence (CL) measurements show the enhancement of peak luminescence by up to 3 times and integrated luminescence by 1.8-2.8 times for the three-layer staggered InGaN QW LED. Electroluminescence (EL) output power of the staggered InGaN QW LED exhibits 2.0-3.5 times enhancement as compared to that of the conventional InGaN QW LED. The experimental results show the good agreement with theory.

AB - Staggered InGaN quantum wells (QWs) are investigated both numerically and experimentally as improved active region for light-emitting diodes (LEDs) emitting at 520-525nm. Based on a self-consistent six-band k·p method, band structures of both two-layer staggered InxGa1-xN/ InyGa1-yN QW and three-layer staggered In yGa1-yN/InxGa1-xN/In yGa1-yN QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate (Rsp) for LEDs emitting at 520-525nm. Numerical analysis shows significant enhancement of Rsp for both two-layer and three-layer staggered InGaN QWs as compared to that of the conventional InzGa1-zN QW. Significant reduction of the radiative carrier lifetime contributes to the enhancement of the radiative efficiency for both two-layer and three-layer staggered InGaN QW LEDs emitting at 520-525nm. Three-layer staggered InGaN QW LEDs emitting at 520-525nm was grown by metal-organic chemical vapour deposition (MOCVD) by employing gradederature profile. Power density-dependent cathodoluminescence (CL) measurements show the enhancement of peak luminescence by up to 3 times and integrated luminescence by 1.8-2.8 times for the three-layer staggered InGaN QW LED. Electroluminescence (EL) output power of the staggered InGaN QW LED exhibits 2.0-3.5 times enhancement as compared to that of the conventional InGaN QW LED. The experimental results show the good agreement with theory.

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DO - 10.1049/iet-opt.2009.0050

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SN - 1751-8768

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SP - 283

EP - 295

JO - IET Optoelectronics

JF - IET Optoelectronics

IS - 6

ER -

Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime

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