Deposition method-induced stress effect on ultrathin titanium nitride etch characteristics

M. M. Hussain*, M. A. Quevedo-Lopez, H. N. Alshareef, D. Larison, K. Mathur, B. E. Gnade

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


A systematic study to investigate the fundamental cause for wet etch variation of ultrathin titanium nitride (TiN) film as a function of the deposition technique such as physical vapor deposition, chemical vapor deposition, and atomic layer deposition is presented. For this study, 10 nm TiN films were investigated using X-ray diffraction, X-ray photoelectron spectroscopy, X-ray reflectometry, and absolute ellipsometry. It is shown that the deposition method plays an important role on the final TiN crystallography and properties. However, it is demonstrated that the dominating factor defining etch rate is the resulting film strain.

Original languageEnglish (US)
Pages (from-to)361-363
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number12
StatePublished - 2006
Externally publishedYes

ASJC Scopus subject areas

  • General Chemical Engineering
  • Electrical and Electronic Engineering
  • General Materials Science
  • Electrochemistry
  • Physical and Theoretical Chemistry


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