Deposition and electrical characterization of dielectric/ferromagnetic heterostructure

T. Wu*, S. B. Ogale, J. E. Garrison, B. Nagaraj, Z. Chen, R. Ramesh, T. Venkatesan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

Original languageEnglish (US)
Pages (from-to)363-370
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000
Externally publishedYes
EventMagnetoresistive Oxides and Related Materials - Boston, MA, United States
Duration: Nov 29 1999Dec 2 1999

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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