Deposition and electrical characterization of dielectric/ferromagnetic heterostructure

T. Wu; S. B. Ogale; J. E. Garrison; B. Nagaraj; Z. Chen; R. Ramesh; T. Venkatesan

Deposition and electrical characterization of dielectric/ferromagnetic heterostructure

T. Wu^*, S. B. Ogale, J. E. Garrison, B. Nagaraj, Z. Chen, R. Ramesh, T. Venkatesan

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We grow Pb(Zr,Ti)O₃ (001)/La_1-xCa_xMnO₃ (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×10⁵V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

Original language	English (US)
Pages (from-to)	363-370
Number of pages	8
Journal	Materials Research Society Symposium - Proceedings
Volume	602
State	Published - 2000
Externally published	Yes
Event	Magnetoresistive Oxides and Related Materials - Boston, MA, United States Duration: Nov 29 1999 → Dec 2 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{2fe9a0d93ea4413e8b5d9cc0d809249c,

title = "Deposition and electrical characterization of dielectric/ferromagnetic heterostructure",

abstract = "We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.",

author = "T. Wu and Ogale, {S. B.} and Garrison, {J. E.} and B. Nagaraj and Z. Chen and R. Ramesh and T. Venkatesan",

year = "2000",

language = "English (US)",

volume = "602",

pages = "363--370",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Magnetoresistive Oxides and Related Materials ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Deposition and electrical characterization of dielectric/ferromagnetic heterostructure

AU - Wu, T.

AU - Ogale, S. B.

AU - Garrison, J. E.

AU - Nagaraj, B.

AU - Chen, Z.

AU - Ramesh, R.

AU - Venkatesan, T.

PY - 2000

Y1 - 2000

N2 - We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

AB - We grow Pb(Zr,Ti)O3 (001)/La1-xCaxMnO3 (001) hetereostructure epitaxially on Nb doped STO substrate using pulsed laser ablation. A field effect device configuration is formed with the manganite as the channel and the Nb:STO substrate as the gate. Channel resistance modulation by the gate pulsing is studied both with and without magnetic field. We not only find a remarkably large electroresistance effect of 76% at 4×105V/cm, but also the complementarity of this ER effect with the widely studied CMR effect. The large size of this effect and the complimentarity of ER and MR effects strongly suggest a percolative phase separated picture of manganites.

UR - http://www.scopus.com/inward/record.url?scp=0034428369&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034428369

SN - 0272-9172

VL - 602

SP - 363

EP - 370

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Magnetoresistive Oxides and Related Materials

Y2 - 29 November 1999 through 2 December 1999

ER -

Deposition and electrical characterization of dielectric/ferromagnetic heterostructure

Abstract

ASJC Scopus subject areas

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