Abstract
Monolayers of dendritic polymers were prepared by covalent attachment to a silicon wafer surface. Field enhanced oxidation of the monolayers was performed on a silicon surface using scanning probe lithography (SPL) to create features with dimensions below 60 nm. The dendrimer films were found to be resistant to a wet HF etch, thus, allowed to produce a positive-tone image as the patterned oxide itself relief features are etched away.
Original language | English (US) |
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Pages (from-to) | 314-318 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 11 |
Issue number | 4 |
DOIs | |
State | Published - 1999 |
Externally published | Yes |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering