Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiao Hang Li; Tsung Ting Kao; Md Mahbub Satter; Yong O. Wei; Shuo Wang; Hongen Xie; Shyh Chiang Shen; P. Douglas Yoder; Alec M. Fischer; Fernando A. Ponce; Theeradetch Detchprohm; Russell D. Dupuis

doi:10.1063/1.4906590

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Xiao Hang Li^*, Tsung Ting Kao, Md Mahbub Satter, Yong O. Wei, Shuo Wang, Hongen Xie, Shyh Chiang Shen, P. Douglas Yoder, Alec M. Fischer, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm², respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

Original language	English (US)
Article number	041115
Journal	Applied Physics Letters
Volume	106
Issue number	4
DOIs	https://doi.org/10.1063/1.4906590
State	Published - Jan 26 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Li, X. H., Kao, T. T., Satter, M. M., Wei, Y. O., Wang, S., Xie, H., Shen, S. C., Yoder, P. D., Fischer, A. M., Ponce, F. A., Detchprohm, T., & Dupuis, R. D. (2015). Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate. Applied Physics Letters, 106(4), Article 041115. https://doi.org/10.1063/1.4906590

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title = "Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate",

abstract = "We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.",

author = "Li, {Xiao Hang} and Kao, {Tsung Ting} and Satter, {Md Mahbub} and Wei, {Yong O.} and Shuo Wang and Hongen Xie and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Fischer, {Alec M.} and Ponce, {Fernando A.} and Theeradetch Detchprohm and Dupuis, {Russell D.}",

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year = "2015",

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doi = "10.1063/1.4906590",

language = "English (US)",

volume = "106",

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AU - Li, Xiao Hang

AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Wei, Yong O.

AU - Wang, Shuo

AU - Xie, Hongen

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Fischer, Alec M.

AU - Ponce, Fernando A.

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

PY - 2015/1/26

Y1 - 2015/1/26

N2 - We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

AB - We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm2, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-field split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.

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Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

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