TY - JOUR
T1 - Demonstration of low forward voltage InGaN-based red LEDs
AU - Iida, Daisuke
AU - Zhuang, Zhe
AU - Kirilenko, Pavel
AU - Velazquez-Rizo, Martin
AU - Ohkawa, Kazuhiro
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
PY - 2020/1/29
Y1 - 2020/1/29
N2 - Here we report InGaN-based red light-emitting diodes (LEDs) grown on (–201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light-output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
AB - Here we report InGaN-based red light-emitting diodes (LEDs) grown on (–201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light-output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
UR - http://hdl.handle.net/10754/661352
UR - https://iopscience.iop.org/article/10.35848/1882-0786/ab7168
UR - http://www.scopus.com/inward/record.url?scp=85083035511&partnerID=8YFLogxK
U2 - 10.35848/1882-0786/ab7168
DO - 10.35848/1882-0786/ab7168
M3 - Article
SN - 1882-0778
VL - 13
JO - Applied Physics Express
JF - Applied Physics Express
IS - 3
ER -