Demonstration of low forward voltage InGaN-based red LEDs

Daisuke Iida, Zhe Zhuang, Pavel Kirilenko, Martin Velazquez-Rizo, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

59 Scopus citations


Here we report InGaN-based red light-emitting diodes (LEDs) grown on (–201) β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light-output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
Original languageEnglish (US)
JournalApplied Physics Express
Issue number3
StatePublished - Jan 29 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).


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