Demonstration of Ga2O3trigate transistors on (100) silicon substrates

Saravanan Yuvaraja; Vishal Khandelwal; Shibin Krishna; Yi Lu; Zhiyuan Liu; Mritunjay Kumar; Dhanu Chettri; Xiao Tang; Glen Issac Mac Iel Garcia; Che Hao Liao; Xiaohang Li

doi:10.1109/ICEE56203.2022.10117786

Demonstration of Ga₂O₃trigate transistors on (100) silicon substrates

Saravanan Yuvaraja, Vishal Khandelwal, Shibin Krishna, Yi Lu, Zhiyuan Liu, Mritunjay Kumar, Dhanu Chettri, Xiao Tang, Glen Issac Mac Iel Garcia, Che Hao Liao, Xiaohang Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.

Original language	English (US)
Title of host publication	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665491853
DOIs	https://doi.org/10.1109/ICEE56203.2022.10117786
State	Published - 2022
Event	2022 IEEE International Conference on Emerging Electronics, ICEE 2022 - Bangalore, India Duration: Dec 11 2022 → Dec 14 2022

Publication series

Name	2022 IEEE International Conference on Emerging Electronics, ICEE 2022

Conference

Conference	2022 IEEE International Conference on Emerging Electronics, ICEE 2022
Country/Territory	India
City	Bangalore
Period	12/11/22 → 12/14/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

Ga203
heterogenous heterostructures
transistors
ultrawide bandgap

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Instrumentation

Access to Document

10.1109/ICEE56203.2022.10117786

Cite this

Yuvaraja, S., Khandelwal, V., Krishna, S., Lu, Y., Liu, Z., Kumar, M., Chettri, D., Tang, X., Garcia, G. I. M. I., Liao, C. H., & Li, X. (2022). Demonstration of Ga₂O₃trigate transistors on (100) silicon substrates. In 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 (2022 IEEE International Conference on Emerging Electronics, ICEE 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEE56203.2022.10117786

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title = "Demonstration of Ga2O3trigate transistors on (100) silicon substrates",

abstract = "In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.",

keywords = "Ga203, heterogenous heterostructures, transistors, ultrawide bandgap",

author = "Saravanan Yuvaraja and Vishal Khandelwal and Shibin Krishna and Yi Lu and Zhiyuan Liu and Mritunjay Kumar and Dhanu Chettri and Xiao Tang and Garcia, {Glen Issac Mac Iel} and Liao, {Che Hao} and Xiaohang Li",

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doi = "10.1109/ICEE56203.2022.10117786",

language = "English (US)",

series = "2022 IEEE International Conference on Emerging Electronics, ICEE 2022",

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Yuvaraja, S, Khandelwal, V, Krishna, S, Lu, Y, Liu, Z , Kumar, M , Chettri, D , Tang, X, Garcia, GIMI, Liao, CH & Li, X 2022, Demonstration of Ga₂O₃trigate transistors on (100) silicon substrates. in 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Conference on Emerging Electronics, ICEE 2022, Bangalore, India, 12/11/22. https://doi.org/10.1109/ICEE56203.2022.10117786

Demonstration of Ga₂O₃trigate transistors on (100) silicon substrates. / Yuvaraja, Saravanan; Khandelwal, Vishal; Krishna, Shibin et al.
2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.

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Yuvaraja S, Khandelwal V, Krishna S, Lu Y, Liu Z , Kumar M et al. Demonstration of Ga₂O₃trigate transistors on (100) silicon substrates. In 2022 IEEE International Conference on Emerging Electronics, ICEE 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE International Conference on Emerging Electronics, ICEE 2022). doi: 10.1109/ICEE56203.2022.10117786