Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics

Vishal Khandelwal*, Manoj Kumar Rajbhar, Glen Isaac Maciel García, Xiao Tang, Biplab Sarkar, Xiaohang Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This report demonstrates an ultrawide bandgap β-Ga2O3 flash memory for the first time. The flash memory device realized on heteroepitaxial β-Ga2O3 film had TiN as the floating gate (FG) and Al2O3 as tunneling and gate oxides. A memory window of > 4 V was obtained between the programmed and erased states of the device. The memory states showed negligible degradation in threshold voltage (VTH) even after 5000 s, exhibiting excellent nonvolatility. Furthermore, the device showed a VTH of ∼0.3 V after applying a 17 V programming voltage pulse, indicating the potential of the electron trapping phenomenon in the FG to achieve enhancement-mode operation in β-Ga2O3 transistors for high-power and logic applications. This study would provide insights for future oxide electronics integrating β-Ga2O3 memory.

Original languageEnglish (US)
Article number060902
JournalJapanese Journal of Applied Physics
Volume62
Issue number6
DOIs
StatePublished - Jun 1 2023

Bibliographical note

Funding Information:
The KAUST researchers are grateful for KAUST Nanofabrication Corelab and funding support of the Baseline Fund BAS/1/1664-01-01, Near-term Grand Challenge Fund REI/1/4999-01-01, and Impact Acceleration Fund REI/1/5124-01-01.

Publisher Copyright:
© 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

Keywords

  • flash memory
  • floating gate
  • oxide electronics
  • program
  • ultrawide bandgap
  • β-GaO

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy

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